Large area direct-write focused ion-beam lithography with a dual-beam microscope

Imre, Alexandra; Ocola, Leonidas E.; Rich, Lauren; Klingfus, Joseph

doi:doi:10.1116/1.3308974

Volume/Page
Keyword
DOI
Citation
Advanced

Volume: Page/Article:

Search Content Type

article doi:

Citation:

You are not logged in to this journal. Log In

Journal of Vacuum Science & Technology B / Volume 28 / Issue 2 / Regular Articles

Previous Article | Next Article

J. Vac. Sci. Technol. B 28, 304 (2010); http://dx.doi.org/10.1116/1.3308974 (6 pages)

Large area direct-write focused ion-beam lithography with a dual-beam microscope ^a

^a This paper was presented at the 53rd International Conference Electron, Ion, and Photon Beam Technology and Nanofabrication Conference held in Marco Island, FL, May 26–29, 2009.

Alexandra Imre¹, Leonidas E. Ocola¹, Lauren Rich², and Joseph Klingfus³

¹Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439
²Department of Physics, Missouri University of Science and Technology, Rolla, Missouri 65409
³Raith USA, Ronkonkoma, New York 11779

View Map

(Published online 22 March 2010)

Abstract

References (6)

Citing Articles (2)

Article Objects (9)

Alerts
- Alert Me When Cited
- Alert Me When Corrected
Tools
Share
- Email Abstract
- Connotea
- CiteULike
- del.icio.us
- BibSonomy
- Tweet this Article
- Add to Facebook

Full Text: Read Online (HTML) | Download PDF | Rent Article | Buy PDF (US$28) | View Cart

The authors have investigated the performance of focused ion-beam (FIB) direct-write lithography for large area (multiple write-field) patterning in an FEI Nova Nanolab 600 dual-beam microscope. Their system is configured with a 100 nm resolution X-Y stage and a RAITH ELPHY LITHOGRAPHY control interface, with its own integrated 16 bit DAC pattern generator and software. Key issues with regard to configuration, process parameters, and procedures have been addressed. Characterization of stitching errors, pattern repeatability, and drift were performed. Offset lithography (multiple exposures with offset write fields) and in-field registration marks were evaluated for correcting stitching errors, and a test microfluidic device covering an area of 1×1.4 mm² was successfully fabricated. The authors found that by using a combination of offset lithography and in-field registration mark correction methods, the stitching errors can be kept well below 100 nm. They also found that due to higher beam deflection speed provided by the electrostatic scanning in FIB systems versus the wide-spread electron-beam systems with electromagnetic scanning, FIB lithography can be just as fast as electron-beam lithography for typical mill depths down to about 200–500 nm (material dependent). This opens the door for a large suite of applications for materials where pattern transfer is difficult or impossible by reactive methods.

ACKNOWLEDGMENTS

The authors would like to thank Oliver Wilhelmi, Paul Anzalone, Laurent Roussel, Steve Neptune, and Lucille Giannuzzi from FEI Co., and Jason Sanabria from Raith USA for insightful discussions on FIB milling. This work was supported by the UChicago Argonne, LLC and the Department of Energy under Contract No. DE-AC02-06CH11357. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
SUMMARY

View more related articles.

KEYWORDS and PACS

Keywords

focused ion beam technology, ion beam lithography, microfluidics

PACS

85.40.Hp

Lithography, masks and pattern transfer
85.85.+j

Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

RELATED DATABASES

To view database links for this article, you need to log in.

History

Received 16 July 2009
Accepted 11 January 2010
Published online 22 March 2010

Digital Object Identifier

http://dx.doi.org/10.1116/1.3308974

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

For access to fully linked references, you need to log in.

For access to citing articles, you need to log in.

Figures (8) Tables (1)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)