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Journal of Vacuum Science & Technology B / Volume 28 / Issue 2 / Regular Articles

J. Vac. Sci. Technol. B 28, 321 (2010); http://dx.doi.org/10.1116/1.3333434 (8 pages)

Effect of carbon contamination on the printing performance of extreme ultraviolet masks

Yu-Jen Fan1, Leonid Yankulin1, Alin Antohe1, Petros Thomas1, Chimaobi Mbanaso1, Rashi Garg1, Yunfei Wang1, Andrea Wüest2, Frank Goodwin2, Sungmin Huh2, Patrick Naulleau3, Kenneth Goldberg3, Iacopo Mochi3, and Gregory Denbeaux1

1College of Nanoscale Science and Engineering, University at Albany, Albany, New York 12203
2SEMATECH, Albany, New York 12203
3Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720

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(Published online 22 March 2010)

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Carbon contamination is a significant issue with extreme ultraviolet (EUV) masks because it lowers throughput and has potential effects on imaging performance. Current carbon contamination research is primarily focused on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on absorbing features and can affect the printed images. In this work, various carbon contamination experiments were performed to study the impact between contamination topography and observed imaging performance. Lithographic simulation using calculated aerial images and experimentally determined resist parameters was performed and compared to the printing results to estimate the allowed carbon thickness with critical dimension compensation applied to the mask.

© 2010 American Vacuum Society

ACKNOWLEDGMENTS

The author would like to thank Paul Denham, Gideon Jones, Brian Hoef, and Lorie-Mae Baclea-an from Berkeley MET team for great help. Financial support from SEMATECH is also gratefully acknowledged.

Article Outline

  1. INTRODUCTION
  2. SYSTEM OVERVIEW
  3. EXPERIMENTAL RESULTS AND ANALYSIS
    1. Mask inspection
    2. Features printing
    3. Surface analysis
    4. Aerial image analysis
  4. SIMULATION OF CONTAMINATION TOPOGRAPHY
    1. Model development
    2. Simulation results
  5. CONCLUSION

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KEYWORDS and PACS

Keywords

carbon, masks, photoresists, surface contamination, ultraviolet lithography

PACS

  • 81.16.Nd

    Micro- and nanolithography

  • 42.82.Cr

    Fabrication techniques; lithography, pattern transfer

  • 81.65.-b

    Surface treatments

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History
Received 10 November 2009
Accepted 2 February 2010
Published online 22 March 2010
Digital Object Identifier
http://dx.doi.org/10.1116/1.3333434

PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

Publisher

American Vacuum Society

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