Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage

Chen, K. H.; Chang, C. Y.; Leu, L. C.; Lo, C. F.; Chu, B. H.; Pearton, S. J.; Ren, F.

doi:doi:10.1116/1.3359603

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Journal of Vacuum Science & Technology B / Volume 28 / Issue 2 / Regular Articles

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J. Vac. Sci. Technol. B 28, 365 (2010); http://dx.doi.org/10.1116/1.3359603 (6 pages)

Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage

K. H. Chen¹, C. Y. Chang², L. C. Leu², C. F. Lo¹, B. H. Chu¹, S. J. Pearton², and F. Ren¹

¹Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611
²Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611

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(Published online 23 March 2010)

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Reliability studies of InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) grown on GaAs substrates for high frequency/power applications are reported. The MHEMTs were stressed at a drain voltage of 3 V for 36 h, as well as undergoing a thermal storage test at 250 °C for 48 h. The drain current density of the MHEMTs at zero gate bias dropped about 12.5% after either the thermal storage experiment or dc stress. The gate current of the MHEMT devices with thermal storage was much higher than that of devices after dc stress. In the latter case, significant gate sinking was observed by transmission electron microscopy. The main degradation mechanism during thermal storage was the reaction of the Ohmic contact with the underlying semiconductor.

ACKNOWLEDGMENT

This work was supported by the DOD MURI monitored by USAFOSR (Kitt Reinhardt) (contract number 2008-MURI-22).

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
CONCLUSIONS

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KEYWORDS and PACS

Keywords

aluminium compounds, current density, gallium arsenide, high electron mobility transistors, III-V semiconductors, indium compounds, nanoelectronics, ohmic contacts, transmission electron microscopy, GaAs, InAlAs, SiNx

PACS

85.30.Tv

Field effect devices
85.35.-p

Nanoelectronic devices

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History

Received 29 December 2009
Accepted 8 February 2010
Published online 23 March 2010

Digital Object Identifier

http://dx.doi.org/10.1116/1.3359603

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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