Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors

Wang, Yu-Lin; Chang, C. Y.; Lim, Wantae; Pearton, S. J.; Norton, D. P.; Chu, B. H.; Lo, C. F.; Ren, F.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

doi:doi:10.1116/1.3368467

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Journal of Vacuum Science & Technology B / Volume 28 / Issue 2 / Regular Articles

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J. Vac. Sci. Technol. B 28, 376 (2010); http://dx.doi.org/10.1116/1.3368467 (4 pages)

Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors

Yu-Lin Wang¹, C. Y. Chang¹, Wantae Lim¹, S. J. Pearton¹, D. P. Norton¹, B. H. Chu², C. F. Lo², F. Ren², J. W. Johnson³, P. Rajagopal³, J. C. Roberts³, E. L. Piner³, and K. J. Linthicum³

¹Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
²Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611
³Nitronex Corporation, Raleigh, North Carolina 27606

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(Published online 25 March 2010)

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Indium zinc oxide (IZO)-gated AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect oxygen gas. Amorphous IZO films with high carrier concentration of 10²¹ cm⁻³ were deposited on the gate region of the HEMTs by cosputtering from ZnO and In₂O₃ targets. The changes in IZO gated-AlGaN/GaN HEMT drain current were used to monitor the presence of oxygen. The IZO gated AlGaN/GaN HEMT sensors were tested with O₂ at room temperature, 50 °C, and 120 °C. There was no response to O₂ at room temperature. At 50 °C, the sensors could sense O₂ but gradually saturated. The sensor showed a strong response to the oxygen gas at 120 °C, which is a much lower temperature than with conventional oxide-based oxygen sensors that typically operate in the range of 400–700 °C. This enhanced oxygen sensing sensitivity was due to the amplification effect of the AlGaN/GaN HEMT. A preannealing step at 350 °C was also found to improve the sensitivity and response time of O₂ sensing at 120 °C.

ACKNOWLEDGMENTS

The work at UF was partially supported by the Office of Naval Research (ONR) under Contract No. 00075094 monitored by Chagaan Baatar, NSF under Contract No. ECCS 0901711 monitored by Yogesh B. Gianchandani. The authors thank UFNF staff for their help.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
SUMMARY AND CONCLUSIONS

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KEYWORDS and PACS

Keywords

aluminium compounds, amorphous semiconductors, annealing, carrier density, gallium compounds, gas sensors, high electron mobility transistors, III-V semiconductors, II-VI semiconductors, indium compounds, oxygen, semiconductor thin films, wide band gap semiconductors, zinc compounds, indium zinc oxide, GaN, oxygen

PACS

07.07.Df

Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.Tv

Field effect devices

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History

Received 12 January 2010
Accepted 22 February 2010
Published online 25 March 2010

Digital Object Identifier

http://dx.doi.org/10.1116/1.3368467

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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