Analysis and modeling of the high vacuum scanning spreading resistance microscopy nanocontact on silicon

Eyben, Pierre; Clemente, Francesca; Vanstreels, Kris; Pourtois, Geoffrey; Clarysse, Trudo; Duriau, Edouard; Hantschel, Thomas; Sankaran, Kiroubanand; Mody, Jay; Vandervorst, Wilfried; Mylvaganam, Kausala; Zhang, Liangchi

doi:doi:10.1116/1.3273895

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Journal of Vacuum Science & Technology B / Volume 28 / Issue 2 / Regular Articles

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J. Vac. Sci. Technol. B 28, 401 (2010); http://dx.doi.org/10.1116/1.3273895 (6 pages)

Analysis and modeling of the high vacuum scanning spreading resistance microscopy nanocontact on silicon ^a

^a This paper was presented at the International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling (INSIGHT-2009) convened April 26–29, 2009 in Napa, California.

Pierre Eyben¹, Francesca Clemente¹, Kris Vanstreels¹, Geoffrey Pourtois¹, Trudo Clarysse¹, Edouard Duriau¹, Thomas Hantschel¹, Kiroubanand Sankaran², Jay Mody³, Wilfried Vandervorst³, Kausala Mylvaganam⁴, and Liangchi Zhang⁴

¹IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
²IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium and Unité PCPM–UCL, Croix du Sud, 1; B-1348 Louvain-la-Neuve, Belgium
³IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium and Instituut voor Kern-en Stralingsfysika, K.U. Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
⁴Center for Advanced Materials Technology, University of Sydney, New South Wales 2006, Australia

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(Published online 30 March 2010)

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Within this paper, the authors propose a refined high vacuum scanning spreading resistance microscopy (HV-SSRM) electromechanical nanocontact model based on experimental results as well as molecular dynamics (MD) simulation results. The formation under the tip of a nanometer-sized pocket of β-tin, a metastable metalliclike phase of silicon (also named Si-II), acting as a virtual probe is demonstrated. This gives a reasonable explanation for the superior SSRM spatial resolution as well as for the electrical properties at the Schottky-like SSRM contact. Moreover, the impact of the doping concentration on the plastic deformation of silicon for different species using micro-Raman combined with indentation experiments is studied. In order to elucidate the superior results of SSRM measurements when performed under high vacuum conditions, the impact of humidity on the mechanical deformation and Si-II formation is also analyzed using MD and SSRM experimental results.

ACKNOWLEDGMENTS

The authors would like to acknowledge O. Richard, P. Van Marcke, and H. Bender for supplying the TEM results, as well as C. Demeulemeester for the diamond tip fabrication. K.M. and L.C.Z. appreciate the financial support from the Australian Research Council to the research.

Article Outline

INTRODUCTION
STUDY OF THE HV-SSRM MECHANICAL NANOCONTACT USING MOLECULAR DYNAMICS SIMULATIONS
TOWARD AN ELECTROMECHANICAL NANOCONTACT MODEL FOR HV-SSRM
IMPACT OF DOPING CONCENTRATION
IMPACT OF HIGH VACUUM
CONCLUSION

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KEYWORDS and PACS

Keywords

elemental semiconductors, indentation, molecular dynamics method, nanocontacts, nanoelectromechanical devices, plastic deformation, Raman spectra, semiconductor doping, silicon

PACS

73.63.Rt

Nanoscale contacts
85.85.+j

Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
61.72.uf

Ge and Si
62.20.Qp

Friction, tribology, and hardness
81.40.Np

Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.fq

Plasticity and superplasticity
81.40.Lm

Deformation, plasticity, and creep
78.30.Hv

Other nonmetallic inorganics

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History

Received 13 July 2009
Accepted 19 October 2009
Published online 30 March 2010

Digital Object Identifier

http://dx.doi.org/10.1116/1.3273895

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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