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J. Vac. Sci. Technol. B 28, 407 (2010); http://dx.doi.org/10.1116/1.3368465 (4 pages)

Nanoscale surface modification of La0.7Sr0.3MnO3 thin films

Y. Liu1, Å. F. Monsen1, J. E. Boschker2, E. Wahlström1, A. Borg1, and T. Tybell2

1Department of Physics, Norwegian University of Science and Technology, 7491 Trondheim, Norway
2Department of Electronics and Telecommunications, Norwegian University of Science and Technology, 7491 Trondheim, Norway

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(Published online 30 March 2010)

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Nanoscale three-dimensional (3D) surface modifications, by scanning tunneling microscopy under ambient conditions, of La0.7Sr0.3MnO3 thin films have been performed. It was demonstrated that there are well-defined combinations of bias voltages, tunneling current, and scan speeds which allow for controlled surface structuring. Lateral structures with sizes down to 1.5 nm are possible to obtain. Moreover, it is possible to reproducibly control the depth of etching with half a unit cell precision, enabling design of 3D surface structures and control of the surface termination of La0.7Sr0.3MnO3 through etching.

© 2010 American Vacuum Society

ACKNOWLEDGMENTS

This project was supported by the Norwegian Research Council under the NANOMAT nationally coordinated project, Project No. 158518/431, and under project numbers 162874 and 10239707. C. C. You is acknowledged for technical assistance.

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION
  4. CONCLUSIONS

KEYWORDS and PACS

PACS

  • 81.07.Bc

    Nanocrystalline materials

  • 81.65.Cf

    Surface cleaning, etching, patterning

  • 68.35.B-

    Structure of clean surfaces (and surface reconstruction)

  • 68.37.Ef

    Scanning tunneling microscopy (including chemistry induced with STM)

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PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

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