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J. Vac. Sci. Technol. B 28, C2A19 (2010); http://dx.doi.org/10.1116/1.3292597 (5 pages)

Cooling power of field emission from the n-type silicon semiconductor

M. S. Chung1, B.-G. Yoon1, A. Mayer2, B. L. Weis3, N. M. Miskovsky3, and P. H. Cutler3

1Department of Physics, University of Ulsan, Ulsan 680-749, Republic of Korea
2Laboratoire de Physique du Solide, Facultes Universitaires Notre-Dame de la Paix, Rue de Bruxelles 61, B-5000 Namur, Belgium
3Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802

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(Published online 31 March 2010)

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The authors have theoretically investigated the cooling effect of field emission from n-type semiconductors. By considering the outgoing and incoming electrons in the region of emission, they make the numerical calculation of the energy exchange per field electron. It is found that even though the Joule heat is taken into account, the energy exchange is large enough for cooling the cathode. The cooling power sufficient for microelectronic device is obtained for field emission from the highly n-doped Si semiconductor.

© 2010 American Vacuum Society

ACKNOWLEDGMENT

This work was supported in part by the 2008 Research Fund of University of Ulsan.

Article Outline

  1. INTRODUCTION
  2. ENERGY EXCHANGE IN FIELD EMISSION
  3. COOLING POWER OF FIELD EMISSION
  4. RESULTS AND DISUSSIONS
  5. CONCLUSIONS

KEYWORDS and PACS

PACS

  • 79.70.+q

    Field emission, ionization, evaporation, and desorption

  • 71.20.Mq

    Elemental semiconductors

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PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

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