Model for trap-assisted electron tunneling in thin insulators

Filip, V.; Liu, J.; Wong, C. K.; Wong, H.; Nicolaescu, D.; Barna, V.; Barna, E. S.

doi:doi:10.1116/1.3358301

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Journal of Vacuum Science & Technology B / Volume 28 / Issue 2 / PAPERS FROM THE 22nd INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE / Fundamental

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J. Vac. Sci. Technol. B 28, C2A58 (2010); http://dx.doi.org/10.1116/1.3358301 (6 pages)

Model for trap-assisted electron tunneling in thin insulators

V. Filip¹, J. Liu², C. K. Wong², H. Wong², D. Nicolaescu³, V. Barna¹, and E. S. Barna¹

¹Faculty of Physics, University of Bucharest, P.O. Box MG-11, Bucharest-Magurele 077125, Romania
²Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
³Kyoto University, Department of Electronic Science and Engineering, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan

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(Published online 1 April 2010)

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The trap-assisted electron tunneling in thin insulators has been modeled to explain the apparition of plateaus in the current-voltage characteristics of some existing experimental data. As a consequence of the electron tight confinement in the trap, the charge therein has a steplike variation with the voltage increase, a feature that further translates into wide plateaus of the current-voltage diagrams, in accordance with some experimental data. The temperature dependence of these diagrams has been included into the model and compares well with the experimental evidence. The possibility of quantitatively comparing the model computations with the measured data opens useful insight into trap’s physical properties such as spatial extent or energy depth.

ACKNOWLEDGMENTS

This research is part of the PN II Project No. 81-048 of the National Agency of Scientific Research (ANCS) of Romania and was partly supported from the PN II grant No. 1902/2008 from CNCSIS, Romania.

Article Outline

INTRODUCTION
DESCRIPTION AND DISCUSSION OF THE PROPOSED MODEL FOR TRAP-ASSISTED ELECTRON TUNNELING
CORRECTIONS TO THE MODEL FOR TRAP-ASSISTED ELECTRON TUNNELING AND COMPARISON TO THE EXPERIMENTAL DATA
CONCLUSIONS

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KEYWORDS and PACS

Keywords

electron traps, hole traps, insulating thin films, tunnelling, Metal nitrides, Oxide semiconductors, Gallium nitride, Silicon dioxide

PACS

73.61.Ng

Insulators
73.50.Gr

Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Gk

Tunneling

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History

Received 16 September 2009
Accepted 8 February 2010
Published online 1 April 2010

Digital Object Identifier

http://dx.doi.org/10.1116/1.3358301

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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