Peculiarities of the photon-assisted field emissions from GaN nanorods

Evtukh, A.; Yilmazoglu, O.; Litovchenko, V.; Semenenko, M.; Kyriienko, O.; Hartnagel, H. L.; Pavlidis, D.

doi:doi:10.1116/1.3368463

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Journal of Vacuum Science & Technology B / Volume 28 / Issue 2 / PAPERS FROM THE 22nd INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE / Fundamental

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J. Vac. Sci. Technol. B 28, C2A72 (2010); http://dx.doi.org/10.1116/1.3368463 (5 pages)

Peculiarities of the photon-assisted field emissions from GaN nanorods

A. Evtukh¹, O. Yilmazoglu², V. Litovchenko¹, M. Semenenko¹, O. Kyriienko¹, H. L. Hartnagel², and D. Pavlidis²

¹Institute of Semiconductor Physics, NASU, 03028 Kiev, Ukraine
²Department of High Frequency Electronics, Technische Universität Darmstadt, 64283 Darmstadt, Germany

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(Published online 1 April 2010)

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The peculiarities of electron field and photon-assisted field emission from GaN nanorods are presented here. Well-aligned GaN field-emitter rods with nanometer-scale diameter were processed on a wafer with n⁺-GaN top active layer on n⁺-Si substrate by plasma and photoelectrochemical etching. The current-voltage characteristics of emission current in Fowler–Nordheim (FN) plots show different slopes for the initial device and with different wavelengths illuminated devices. At electron-field emission from GaN, as a rule, the curves with two slopes (lower at a low voltage and higher at a high voltage) in Fowler–Nordheim coordinates were observed. The influence of light illumination on the field emission was discovered only on the low-voltage part of the curve. At higher voltages, the experimental curves without and with illumination practically coincided. The slope of the low-voltage part of FN plots decreased as a result of illumination. This fact points at the lowering of the energy barrier at field emission due to the electron excitation caused by light. The energy-barrier heights at field and photofield emission were estimated. For the explanation of experimental results, a model based on electron excitation by light, subbandgap and band-to-band transitions, and electron emission from different valleys with their specific electron affinities has been proposed.

ACKNOWLEDGMENTS

The research described in this publication was in part supported by the Deutsches Zentrum für Luft- und Raumfahrt e.V. (Bundesministerium für Bildung und Forschung) in connection with the Germany-Ukrainian Project No. UKR 07/017.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
CONCLUSION

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KEYWORDS and PACS

Keywords

electron affinity, electron field emission, etching, gallium compounds, III-V semiconductors, nanorods, wide band gap semiconductors, GaN, gallium nitride

PACS

79.70.+q

Field emission, ionization, evaporation, and desorption
73.63.Bd

Nanocrystalline materials
81.07.Bc

Nanocrystalline materials
81.65.Cf

Surface cleaning, etching, patterning

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History

Received 11 September 2009
Accepted 24 February 2010
Published online 1 April 2010

Digital Object Identifier

http://dx.doi.org/10.1116/1.3368463

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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