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Journal of Vacuum Science & Technology B / Volume 28 / Issue 2 / PAPERS FROM THE 22nd INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE / Fundamental

J. Vac. Sci. Technol. B 28, C2A83 (2010); http://dx.doi.org/10.1116/1.3276093 (7 pages)

Numerical simulations on capture area of gas molecules for high brightness gas field ion source

Yasuhiko Sugiyama1, Yusuke Kobayashi2, Yuuki Morikawa2, Kazuo Kajiwara3, and Koichi Hata3

1Electrical and Electronic Engineering Division, Mie University, 1577 Kurima-Machiya, Tsu, Mie 514-8507, Japan; Center for Ultimate Technology on Nano-Electronics, Mie University, 1577 Kurima-Machiya, Tsu, Mie 514-8507, Japan; and SII Nanotechnology Inc., 36-1 Takenoshita, Oyama-cho, Sunto-gun, Shizuoka 410-1393, Japan
2Electrical and Electronic Engineering Division, Mie University, 1577 Kurima-Machiya, Tsu, Mie 514-8507, Japan
3Electrical and Electronic Engineering Division, Mie University, 1577 Kurima-Machiya, Tsu, Mie 514-8507, Japan and Center for Ultimate Technology on Nano-Electronics, Mie University, 1577 Kurima-Machiya, Tsu, Mie 514-8507, Japan

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(Published online 1 April 2010)

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The emitter shape dependence of an ion current from a gas field ion source was examined using numerical simulations. A tip shape with a nanoscale protrusion on the apex was adopted. The results demonstrated that the effective capture area becomes large, when the shank angle is small. For a He gas temperature of 40 K, the effective capture areas of the emitters with the taper half angles of 2° and 15° were estimated to be 0.310 and 0.200 μm2, respectively. With conditions where the electric field strength and gas pressure are constant, the larger effective capture area leads a larger ion current. The ion currents from the emitters with the taper half angles of 2° and 15° were estimated to be 100 and 67 pA at a He gas pressure of 0.01 Pa, respectively. Therefore, the emitter of the smaller shank angle is capable of emitting the higher ion current. The simulation results showed good agreement with the experimental results.

© 2010 American Vacuum Society

ACKNOWLEDGMENTS

This work is a part of the research program “The developments of the electron microscope elemental technology in the next generation,” which is financially supported by the Ministry of Education, Culture, Sports, Science and Technology of Japan. The authors gratefully acknowledge fruitful discussions with Dr. Shigeo Okayama of the National Institute of Advanced Industrial and Technology and Professor Kazumasa Hiramatsu of the Center for Ultimate Technology on nano-Electronics at Mie University.

Article Outline

  1. INTRODUCTION
  2. SIMULATION METHOD
    1. Emitter configurations
    2. Field enhanced incident area of gas molecules
    3. Capture probability
    4. Effective capture area and ion current
  3. RESULT AND DISCUSSION
    1. Field enhanced incident area of gas molecules
    2. Capture probability
    3. Effective capture area
    4. Comparison with the experimental value of ion current
  4. CONCLUSIONS

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KEYWORDS and PACS

Keywords

electron capture, field emitter arrays, helium neutral molecules, ion emission, ion sources, numerical analysis, tungsten, helium, neon, argon

PACS

  • 85.45.Db

    Field emitters and arrays, cold electron emitters

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History
Received 14 September 2009
Accepted 30 November 2009
Published online 1 April 2010
Digital Object Identifier
http://dx.doi.org/10.1116/1.3276093

PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

Publisher

American Vacuum Society

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