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J. Vac. Sci. Technol. B 28, C2A98 (2010); http://dx.doi.org/10.1116/1.3292599 (6 pages)

Study of the synthesis of tungsten trioxide nanostructured arrays by tungsten hot filament chemical vapor deposition method and their field emission properties

Di Lu1, Bo Liang2, Akihisa Ogino2, and Masaaki Nagatsu2

1Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan and Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Science, Dushu Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, 215125 Suzhou, People's Republic of China,
2Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan

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(Published online 1 April 2010)

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Tungsten trioxides (WO3) nanorod arrays had been fabricated at different substrate temperatures by hot filament chemical vapor deposition. The morphology of the WO3 nanorod array is significantly dependent on the substrate temperature in a relatively narrow range (600–800 °C). Through the x-ray diffraction pattern, different preference growth directions of WO3 nanorods at different substrate temperatures were observed. A discussion of the possible growth mechanism is given. Furthermore, the substrate temperature during the growth was also found to be closely related with the morphologies of the nanorod arrays and their field emission properties.

© 2010 American Vacuum Society

ACKNOWLEDGMENTS

This work has been performed under the 21st Century COE Program “Research and Education Center of Nanovision Science” by the Japan Society for Promotion of Science (JSPS). The authors would like to thank and associate Murakami for the FE-SEM analysis and Fukaya for the XRD analysis.

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION
  4. CONCLUSION

KEYWORDS and PACS

PACS

  • 81.16.-c

    Methods of micro- and nanofabrication and processing

  • 81.07.Bc

    Nanocrystalline materials

  • 61.46.-w

    Structure of nanoscale materials

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 79.70.+q

    Field emission, ionization, evaporation, and desorption

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PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

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