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J. Vac. Sci. Technol. B 28, C2A9 (2010); http://dx.doi.org/10.1116/1.3333440 (4 pages)

Electron wave interference induced by electrons emitted from Pt field emitter fabricated by focused-ion-beam-induced deposition

K. Murakami1, T. Matsuo2, F. Wakaya3, and M. Takai3

1Center for Quantum Science and Technology under Extreme Conditions, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
2Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
3Center for Quantum Science and Technology under Extreme Conditions, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan and Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan

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(Published online 19 March 2010)

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Fringelike electron emission patterns emitted from Pt field emitters fabricated by focused-ion-beam-induced deposition (FIBID) were investigated by field-emission microscopy and in situ field-ion microscopy (FIM). The FIM image with electron emission sites showed adjacent two emission sites within a diameter of a Pt nanocrystal. These results indicate that the origin of fringelike electron emission patterns of Pt field emitters fabricated by FIBID are the electron wave interference induced by electrons emitted from adjacent two electron emission sites within a Pt nanocrystal.

© 2010 American Vacuum Society

ACKNOWLEDGMENTS

This work was partially supported by the Ministry of Education, Culture, Sports, Science and Technology of Japan, through a Grant-in-Aid for Young Scientists B (Grant No. 20410108) and a Grant-in-Aid for Scientific Research A (Grant No. 19206008).

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION
  4. CONCLUSIONS

KEYWORDS and PACS

PACS

  • 79.70.+q

    Field emission, ionization, evaporation, and desorption

  • 81.16.-c

    Methods of micro- and nanofabrication and processing

  • 61.46.Df

    Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

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PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

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