Electron field emission from the Si nanostructures formed by laser irradiation

Evtukh, A.; Medvid, A.; Onufrijevs, P.; Okada, M.; Mimura, H.

doi:doi:10.1116/1.3333435

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Journal of Vacuum Science & Technology B / Volume 28 / Issue 2 / PAPERS FROM THE 22nd INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE / Materials

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J. Vac. Sci. Technol. B 28, C2B11 (2010); http://dx.doi.org/10.1116/1.3333435 (3 pages)

Electron field emission from the Si nanostructures formed by laser irradiation

A. Evtukh¹, A. Medvid², P. Onufrijevs³, M. Okada⁴, and H. Mimura⁴

¹Institute of Semiconductor Physics, NASU, 41 pr. Nauki, 03028 Kyiv, Ukraine
²Institute of Semiconductor Physics, NASU, 41 pr. Nauki, 03028 Kyiv, Ukraine and Riga Technical University, 14 Azenes Str., LV 1048 Riga, Latvia
³Riga Technical University, 14 Azenes Str., LV 1048 Riga, Latvia
⁴Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku Hamamatsu 432-8011, Japan

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(Published online 26 March 2010)

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The technology of nanostructure formation by laser radiation on Si surface for the electron field emitter is proposed. n-type Si wafers are used in the experiments. The nanometer size, conelike nanostructures with nanosphere on top of the cone were created on the surface as a result of laser irradiation. The electron field emission from such nanostructures has been investigated. It has some peculiarities, namely, (i) a decrease in the threshold field in subsequent measurements and (ii) two slopes of Fowler–Nordheim curves (higher slope at low fields and lower slope at high fields). Analysis of the scanning electron microscopy micrographs and electron field emission curves allows the authors to estimate (i) the electron field enhancement coefficient, β ≈ 100, (ii) work functions, Φ₁ = 6.8 eV at the first measurement and from the two slopes in subsequent measurements Φ₂ = 3.9 eV, Φ₃ = 2.38 eV, and (iii) the effective emission area, α = (3×10⁻⁸)–(1.8×10⁻⁵) cm². The experimental results obtained have been explained in frame of the proposed model which takes into account formation of native oxide and/or positive dipoles (Si⁺–O⁻) due to oxygen adsorption on the Si surface.

ACKNOWLEDGMENT

This work was partly supported by the Latvian Council of Science under Grant No. 0577.01.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
CONCLUSION

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KEYWORDS and PACS

Keywords

adsorption, electron field emission, elemental semiconductors, laser materials processing, nanostructured materials, nanotechnology, scanning electron microscopy, semiconductor growth, silicon, surface treatment, work function, silicon, silicon oxide, oxygen

PACS

79.70.+q

Field emission, ionization, evaporation, and desorption
81.16.-c

Methods of micro- and nanofabrication and processing
81.65.-b

Surface treatments
61.46.-w

Structure of nanoscale materials
73.30.+y

Surface double layers, Schottky barriers, and work functions
68.43.Mn

Adsorption kinetics

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History

Received 28 September 2009
Accepted 1 February 2010
Published online 26 March 2010

Digital Object Identifier

http://dx.doi.org/10.1116/1.3333435

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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