Low work function nanometer-order controlled transfer mold field-emitter arrays

Nakamoto, Masayuki; Moon, Jonghyun; Shiratori, Koji

doi:doi:10.1116/1.3371140

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Journal of Vacuum Science & Technology B / Volume 28 / Issue 2 / PAPERS FROM THE 22nd INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE / Materials

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J. Vac. Sci. Technol. B 28, C2B1 (2010); http://dx.doi.org/10.1116/1.3371140 (5 pages)

Low work function nanometer-order controlled transfer mold field-emitter arrays

Masayuki Nakamoto, Jonghyun Moon, and Koji Shiratori

Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan

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(Published online 26 March 2010)

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Extremely sharp and uniform field-emitter arrays (FEAs) with low work function and environmentally resistant emitter materials, such as TiN and Au, have been fabricated by a transfer metal mold FEA fabrication method to realize highly efficient, highly reliable, and low-cost vacuum nanoelectronic devices and aerospace nanodevices for electric propulsion engines. The tip radii can be linearly controlled from 2.5 to 52.5 nm by changing the thickness of the emitter materials. For the first time, turn-on electric fields of the transfer metal mold FEAs have been controlled by changing tip radii. Control of turn-on field is one of requirements for realizing vacuum nanoelectronic devices, such as field-emission displays, aerospace devices, and so on. The transfer metal mold fabrication method is useful for controlling the turn-on fields and tip radii and conductive to changing emitter materials while maintaining sharp and uniform emitter shapes.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSIONS
CONCLUSION

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KEYWORDS and PACS

Keywords

field emitter arrays, gold, nanoelectronics, nanofabrication, titanium compounds, transfer moulding, work function, Ni: nickel, Au: gold, TiN: titanium nitride

PACS

85.45.Db

Field emitters and arrays, cold electron emitters
81.10.Fq

Growth from melts; zone melting and refining
85.35.-p

Nanoelectronic devices
81.16.-c

Methods of micro- and nanofabrication and processing
73.30.+y

Surface double layers, Schottky barriers, and work functions

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History

Received 1 December 2009
Accepted 26 February 2010
Published online 26 March 2010

Digital Object Identifier

http://dx.doi.org/10.1116/1.3371140

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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