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J. Vac. Sci. Technol. B 28, C2B43 (2010); http://dx.doi.org/10.1116/1.3360900 (4 pages)

Improved field emission properties of CdS deposited single walled carbon nanotube emitter

Jungwoo Lee, Wonjoo Lee, Taehee Park, Jaeseung Lee, Eunkyung Park, Donghwan Lee, Jongtaek Lee, and Whikun Yi

Department of Chemistry, Hanyang University, Haengdang-dong 17, Seoul 133-791, Korea

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(Published online 31 March 2010)

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A film of shaped CdS nanoparticle deposited single walled carbon nanotubes (CdS-SCWNTs) on silicon wafer is successfully fabricated by the method of layer-by-layer deposition cycle. The field emission (FE) properties of CdS-SWCNTs film are investigated for the first time. The film of CdS-SWCNTs exhibits better FE properties, a lower turn-on field, and a higher field enhancement factor than that of the film of pristine SWCNTs, for which the physical and chemical properties of the CdS nanoparticle have played an important role. As a II-VI semiconductor compound, CdS has attracted considerable interest in optoelectronic application because of its relatively low electron affinity, high chemical inertness, and sputter resistance.

© 2010 American Vacuum Society

ACKNOWLEDGMENTS

This work was supported by the Korean Science and Engineering Foundation (Grant No. KRF-2009-007-2914) and the Research fund of the Hanyang University (Grant No. HYU-2008-T). J.L. wishes to thank Brain Korea 21 for the award of financial support.

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULT AND DISCUSSION
  4. CONCLUSION

KEYWORDS and PACS

PACS

  • 79.70.+q

    Field emission, ionization, evaporation, and desorption

  • 85.45.Db

    Field emitters and arrays, cold electron emitters

  • 81.07.Bc

    Nanocrystalline materials

  • 81.05.Dz

    II-VI semiconductors

  • 68.65.-k

    Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

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PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

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