Comparison of structural and photoluminescence properties of zinc oxide nanostructures influenced by gas ratio and substrate bias during radio frequency sputtering

Li, Chaoyang; Matsuda, Tokiyoshi; Kawaharamura, Toshiyuki; Furuta, Hiroshi; Furuta, Mamoru; Hiramatsu, Takahiro; Hirao, Takashi; Nakanishi, Yoichiro; Ichinomiya, Keiji

doi:doi:10.1116/1.3271250

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Journal of Vacuum Science & Technology B / Volume 28 / Issue 2 / PAPERS FROM THE 22nd INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE / Materials

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J. Vac. Sci. Technol. B 28, C2B51 (2010); http://dx.doi.org/10.1116/1.3271250 (5 pages)

Comparison of structural and photoluminescence properties of zinc oxide nanostructures influenced by gas ratio and substrate bias during radio frequency sputtering

Chaoyang Li¹, Tokiyoshi Matsuda¹, Toshiyuki Kawaharamura¹, Hiroshi Furuta¹, Mamoru Furuta¹, Takahiro Hiramatsu¹, Takashi Hirao¹, Yoichiro Nakanishi², and Keiji Ichinomiya³

¹Research Institute for Nano-device, Kochi University of Technology, Kami, Kochi 782-8502, Japan
²Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan
³Nichia Corporation, 791 Oka, Kaminaka-cho, Anan, Tokushima 774-8601, Japan

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(Published online 31 March 2010)

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Zinc oxide (ZnO) nanostructured films were prepared on quartz glasses by radio frequency magnetron sputtering deposition of ZnO films at different argon to oxygen (Ar/O₂) gas ratios and post-treated in a reducing ambient at a low temperature. The effects of Ar/O₂ gas ratio and substrate bias on the photoluminescence and structural properties were investigated. It was found that the formed ZnO nanostructures significantly depended on the O₂ fraction. The crystallinities of the ZnO nanostructures were improved, and the green emission was enhanced with the decrease of the O₂ fraction in the Ar/O₂ mixtures. A green emission peak centered at 510 nm was obtained after the post-treatment. In addition, the applied substrate bias contributed to remarkably improving the crystallinity of the ZnO films. The strongest green emission was obtained from the ZnO nanostructures prepared from the ZnO film deposited in a pure Ar ambient with the substrate bias applied.

ACKNOWLEDGMENTS

The authors would like to thank Dr. H. Kominami of Shizuoka University for help in CL measurement. The work was supported by the New Energy and Industrial Technology Development Organization (NEDO) of the Japanese government.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
SUMMARY

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KEYWORDS and PACS

Keywords

II-VI semiconductors, nanostructured materials, photoluminescence, sputter deposition, zinc compounds, ZnO, nanostructures, thin film phosphor, CL luminance, low temperature process

PACS

78.55.Et

II-VI semiconductors
81.07.Bc

Nanocrystalline materials
81.15.Cd

Deposition by sputtering
61.46.-w

Structure of nanoscale materials

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History

Received 14 September 2009
Accepted 19 October 2009
Published online 31 March 2010

Digital Object Identifier

http://dx.doi.org/10.1116/1.3271250

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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