Development of dry-processed silicon nanodot planar cold cathode and its electron emission properties

Hirano, Yoshiyuki; Nanba, Masakazu; Egami, Norifumi; Yamazaki, Susumu; Koshida, Nobuyoshi

doi:doi:10.1116/1.3275746

Volume/Page
Keyword
DOI
Citation
Advanced

Volume: Page/Article:

Search Content Type

article doi:

Citation:

You are not logged in to this journal. Log In

Journal of Vacuum Science & Technology B / Volume 28 / Issue 2 / PAPERS FROM THE 22nd INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE / Materials

Previous Article | Next Article

J. Vac. Sci. Technol. B 28, C2B6 (2010); http://dx.doi.org/10.1116/1.3275746 (5 pages)

Development of dry-processed silicon nanodot planar cold cathode and its electron emission properties

Yoshiyuki Hirano¹, Masakazu Nanba¹, Norifumi Egami¹, Susumu Yamazaki², and Nobuyoshi Koshida²

¹NHK Science and Technology Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, Japan
²Tokyo University of Agriculture and Technology, 2-24-16 Naka-machi, Koganei, Tokyo 184-8588, Japan

View Map

(Published online 26 March 2010)

Abstract

References (16)

Article Objects (8)

Alerts
- Alert Me When Cited
- Alert Me When Corrected
Tools
Share
- Email Abstract
- Connotea
- CiteULike
- del.icio.us
- BibSonomy
- Tweet this Article
- Add to Facebook

Full Text: Read Online (HTML) | Download PDF | Rent Article | Buy PDF (US$28) | View Cart

A dry-processed planar-type cold cathode has been developed using a nanometer-sized Si dot film as an electron drift layer. Multilayered Si-nanodot films were fabricated on a n-type single-crystalline Si (c-Si) wafer by sequential dry processing (low-pressure chemical vapor deposition) and subsequent thermal oxidation. Planar-type cold cathodes composed of a thin Au film, a nanometer-sized Si dot film, a c-Si substrate, and a back contact exhibit fluctuation-free electron emission with small angle dispersion. The emission efficiency was 0.14% at an applied voltage of 20 V for the device with the average Si dot size of 1.3 nm. The emission model based on multiple tunneling cascade in nanocrystalline silicon dot chain interconnected via tunnel oxide has been supported by the device fabricated using dry processing.

ACKNOWLEDGMENTS

The authors wish to thank Professor S. Miyazaki of Hiroshima University for useful discussions on sample preparation. The authors also thank T. Ohta of Tokyo University of Agriculture and Technology for his help and comments with the energy distribution measurement.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
CONCLUSIONS

View more related articles.

KEYWORDS and PACS

Keywords

cathodes, chemical vapour deposition, electron emission, elemental semiconductors, nanofabrication, nanostructured materials, oxidation, silicon, Si, SiO2, Au

PACS

81.16.-c

Methods of micro- and nanofabrication and processing
68.65.Ac

Multilayers
81.15.Gh

Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.Mq

Oxidation
61.46.-w

Structure of nanoscale materials

RELATED DATABASES

To view database links for this article, you need to log in.

History

Received 10 September 2009
Accepted 23 November 2009
Published online 26 March 2010

Digital Object Identifier

http://dx.doi.org/10.1116/1.3275746

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

For access to fully linked references, you need to log in.

Figures (7) Tables (1)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)