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J. Vac. Sci. Technol. B 28, C2C1 (2010); http://dx.doi.org/10.1116/1.3276096 (4 pages)

Enhancement of ion-induced bending phenomenon using a double-layered film for field emitter array fabrication

T. Yoshida, M. Nagao, and S. Kanemaru

National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan

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(Published online 19 March 2010)

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The authors proposed a simple fabrication technique of field emitter array based on a ion-induced bending (IIB) phenomenon. This technique is a very simple two-step process, involving the formation of a cantilever and subsequent ion irradiation. To form a vertical thin film emitter with practical ion dose, however, only a few specific film materials with limited thickness can be used. Therefore, an enhancement method of the IIB phenomenon is necessary. To enhance the IIB phenomenon, the authors proposed the double-layered film method. It was found that the ion-induced bending effect could be extremely enhanced by using a double-layered film method. The required dose could consequently be decreased to less than 5×1015 cm−2 in the case of using a heavy element for the cantilever film. This methodology increases the potential of ion-induced bending as a simple fabrication technique for FEA device structures.

© 2010 American Vacuum Society

ACKNOWLEDGMENT

A part of this work was conducted at the AIST Nano-Processing Facility (NPF).

Article Outline

  1. INTRODUCTION
  2. INVESTIGATION OF IIB PHENOMENON
  3. PREDICTION OF IIB ENHANCEMENT
  4. DEMONSTRATION OF IIB ENHANCEMENT METHOD
  5. SUMMARY

KEYWORDS and PACS

PACS

  • 85.45.Db

    Field emitters and arrays, cold electron emitters

  • 68.55.-a

    Thin film structure and morphology

  • 61.80.Jh

    Ion radiation effects

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PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

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