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J. Vac. Sci. Technol. B 28, C2C45 (2010); http://dx.doi.org/10.1116/1.3299065 (4 pages)

Study of techniques for improving emission uniformity of gated CuO nanowire field emitter arrays

R. Z. Zhan, Jun Chen, S. Z. Deng, and N. S. Xu

State Key Laboratory of Optoelectronic Materials and Technologies and Guangdong Provincial Key Laboratory of Display Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People’s Republic of China

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(Published online 1 April 2010)

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In this study, the fabrication technologies for a gated CuO nanowire field emitter arrays were investigated. Fabrication process was optimized to achieve uniform emission. More uniform emission is achieved from the CuO nanowire field emitter arrays prepared with an additional lift-off process. The improved uniformity is attributed to the removal of etch residues as well as higher resistance between the CuO nanoemitter and cathode electrode. The study shows that the gated CuO nanowire field emitter arrays have potential for application in high resolution field emission display.

© 2010 American Vacuum Society

ACKNOWLEDGMENTS

The authors gratefully acknowledge the financial support from the NNSFC (Grant Nos. U0634002 and 60925001), the MOST of China (Grant Nos. 2008AA03A314, 2003CB314701, and 2007CB935501), the FANEDD (Grant No. 200727), and the Department of Information Industry of Guangdong Province and Science and Technology Department of Guangzhou City.

Article Outline

  1. INTRODUCTION
  2. FABRICATION PROCESS
  3. RESULTS AND DISCUSSION
  4. CONCLUSION

KEYWORDS and PACS

PACS

  • 81.07.Gf

    Nanowires

  • 85.45.Fd

    Field emission displays (FEDs)

  • 79.70.+q

    Field emission, ionization, evaporation, and desorption

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PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

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