2/3 in. ultrahigh-sensitivity image sensor with active-matrix high-efficiency electron emission device

Nakada, Tomonari; Sato, Takanobu; Matsuba, Yohei; Sakemura, Kazuto; Okuda, Yoshiyuki; Negishi, Nobuyasu; Watanabe, Atsushi; Yoshikawa, Takamasa; Ogasawara, Kiyohide; Nanba, Masakazu; Tanioka, Kenkichi; Egami, Norifumi; Kobayashi, Akira; Koshida, Nobuyoshi

doi:doi:10.1116/1.3271163

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Journal of Vacuum Science & Technology B / Volume 28 / Issue 2 / PAPERS FROM THE 22nd INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE / Applications

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J. Vac. Sci. Technol. B 28, C2D11 (2010); http://dx.doi.org/10.1116/1.3271163 (4 pages)

2/3 in. ultrahigh-sensitivity image sensor with active-matrix high-efficiency electron emission device

Tomonari Nakada¹, Takanobu Sato¹, Yohei Matsuba¹, Kazuto Sakemura¹, Yoshiyuki Okuda¹, Nobuyasu Negishi¹, Atsushi Watanabe¹, Takamasa Yoshikawa¹, Kiyohide Ogasawara¹, Masakazu Nanba², Kenkichi Tanioka², Norifumi Egami², Akira Kobayashi³, and Nobuyoshi Koshida⁴

¹Corporate R&D Laboratories, Pioneer Corporation, 6-1-2 Fujimi, Tsurugashima, Saitama 350-2288, Japan
²NHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510, Japan
³Electron Tube Division, Hamamatsu Photonics K.K., 314-5, Shimokanzo, Iwata-shi, Shizuoka 438-0193, Japan
⁴Graduate School of Engineering, Department of Electrical and Electronic Engineering, Tokyo University of A & T, 2-24-16 Nakamachi, Koganei, Tokyo 184-8588, Japan

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(Published online 22 March 2010)

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A 640×480 pixel image sensor has been developed for low light imaging with a practical resolution. This image sensor combined an active-matrix high-efficiency electron emission device (HEED) with a high-gain avalanche rushing amorphous photoconductor (HARP) target. To meet the requirement for a scaling of the imaging size, we developed a 2/3 in. image sensor based on an active-matrix HEED with 13.75×13.75 μm² pixels. The highly emissive property of 3.8 μA/pixel was comparable to that obtained previously from a 1 in. device. The possible effect of the pixel size scaling on the image-pickup sensitivity was compensated by a significant increase in the emission current density. The technological potential of the HEED-HARP image sensing has been further enhanced toward practical use.

ACKNOWLEDGMENT

The authors would like to thank the members of the Advanced Device Division at Pioneer Micro Technology Corporation for their technical contribution.

Article Outline

INTRODUCTION
ACTIVE-MATRIX HEED WITH 13.75×13.75 μm² pixels
2/3 in. HEED-HARP IMAGE SENSOR
1. Operation principle of the FEA-HARP image sensor
2. HEED-HARP image sensor
RESULT
CONCLUSION

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KEYWORDS and PACS

Keywords

electron emission, image sensors, photoconducting materials, Si, SiOx, carbon

PACS

42.79.Pw

Imaging detectors and sensors
72.40.+w

Photoconduction and photovoltaic effects

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History

Received 10 September 2009
Accepted 12 October 2009
Published online 22 March 2010

Digital Object Identifier

http://dx.doi.org/10.1116/1.3271163

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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