Double-gate-driving field emission display panel with stacked-metalized-aperture structure

Luo, Jie; Chen, Jun; Deng, S. Z.; Zhang, Yu; Xu, N. S.

doi:doi:10.1116/1.3275745

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Journal of Vacuum Science & Technology B / Volume 28 / Issue 2 / PAPERS FROM THE 22nd INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE / Applications

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J. Vac. Sci. Technol. B 28, C2D15 (2010); http://dx.doi.org/10.1116/1.3275745 (7 pages)

Double-gate-driving field emission display panel with stacked-metalized-aperture structure

Jie Luo, Jun Chen, S. Z. Deng, Yu Zhang, and N. S. Xu

State Key Laboratory of Optoelectronic Materials and Technologies and Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-Sen University, Guangdong 510275, People’s Republic of China

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(Published online 22 March 2010)

Abstract

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To utilize high-performance nanoemitter cold cathode prepared by high-temperature direct-growth process, 4.5 in. field emission display based on double-gate driving principle has been fabricated. A stacked-metalized-aperture structure has been introduced to improve stability. This structure composes of two gate-plates and is different in terms of addressing behavior from previously reported single gate-plate structure. Device characteristics have been investigated in details and are found to comply in trend with simulated results. The upper gate is found having native focusing feature. The result is encouraging as the current structure is possible to achieve high-performance large-area display.

ACKNOWLEDGMENTS

The authors gratefully acknowledge the financial support of the project from the NNSFC (Grant Nos. 50021202, 50329201, and 60925001), the MOST (Grant Nos. 2003CB314701, 2003CB314706, and 2008AA03A314), the MOE of China (FANEDD, Grant No. 200727), and the Science and Technology Department of Guangdong Province.

Article Outline

INTRODUCTION
DEVICE STRUCTURE, ADDRESSING PRINCIPLE, AND FABRICATION PROCESS
1. Device structure
2. Addressing principle
3. Fabrication process
RESULTS AND DISCUSSIONS
1. Modulation of emission current by lower gate
2. Modulation of transmission current by upper gate
3. Native focusing feature of upper gate
4. Perspective on improvement of luminance
CONCLUSION

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KEYWORDS and PACS

Keywords

field emission displays, nanoelectronics

PACS

85.45.Fd

Field emission displays (FEDs)

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History

Received 16 September 2009
Accepted 23 November 2009
Published online 22 March 2010

Digital Object Identifier

http://dx.doi.org/10.1116/1.3275745

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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