Metal-free and gasless space charge compensation of low energy ion beam by using surface-carbonized silicon field emitter array

Takeuchi, Mitsuaki; Gotoh, Yasuhito; Tsuji, Hiroshi; Ishikawa, Junzo; Sakai, Shigeki

doi:doi:10.1116/1.3271159

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Journal of Vacuum Science & Technology B / Volume 28 / Issue 2 / PAPERS FROM THE 22nd INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE / Applications

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J. Vac. Sci. Technol. B 28, C2D5 (2010); http://dx.doi.org/10.1116/1.3271159 (6 pages)

Metal-free and gasless space charge compensation of low energy ion beam by using surface-carbonized silicon field emitter array

Mitsuaki Takeuchi¹, Yasuhito Gotoh², Hiroshi Tsuji², Junzo Ishikawa², and Shigeki Sakai³

¹Innovation Plaza Kyoto, Japan Science and Technology Agency, 1-30 Goryo-Ohara Nishikyo-ku, Kyoto 615-8245, Japan
²Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
³Nissin Ion Equipment, Co. Ltd., 575 Kuze-Tonoshirocho, Minami-ku, Kyoto 601-8205, Japan

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(Published online 19 March 2010)

Abstract

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Surface-carbonized silicon field emitter array (Si:C-FEA), basically metal-free and gasless, was applied to a space charge compensation for neon ion beam after 700 mm, running with 0.5 keV and 15 μA. Estimated low energy electrons of 2.7 eV at maximum with current of 7.7 μA extracted from Si:C-FEA electron sources, which consisted of 7164-tip emitter cones and electron deceleration systems, were supplied into the ion beam. Transportation property was evaluated from the distribution of the current density of the ion beam with respect to its emittance. The distribution of the ion current density was narrowed and intensified by the electron supply. The transportation efficiency was improved from 56% to 87% by supplying electrons with the Si:C-FEA electron sources. This result showed the nearly complete space charge compensation similar to the reference result of the filament with transportation efficiency of 91%.

ACKNOWLEDGMENTS

The authors are thankful to Nicolaescu (Nissin Ion Equipment, Co. Ltd.) for many contributions to simulation of the SCC. This work was done as a part of the project entitled “Development of nondiverging transport and irradiation techniques by low energy ion beams for advanced semiconductor device manufacturing process” under a contract of Practical Application Research from the Innovation Plaza Kyoto, Japan Science and Technology Agency (JST).

Article Outline

INTRODUCTION
PREPARATION OF ELECTRON SOURCES
1. Fabrication of Si:C-FEA
2. Si:C-FEA with deceleration system
3. Performance of the deceleration system
4. Thermal filament for a reference
EVALUATION OF SPACE CHARGE COMPENSATION
1. Development of a SCC evaluation system
2. Estimation of the SCC effect
3. Measurement of ion beam emittance
RESULTS
1. Emission characteristics of the Si:C-FEA electron source
2. Distribution of ion current density
DISCUSSION
SUMMARY

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KEYWORDS and PACS

Keywords

charge compensation, current density, electron sources, field emitter arrays, ion beams, silicon, space charge, silicon, silicon carbide, neon

PACS

77.22.Jp

Dielectric breakdown and space-charge effects
85.45.Db

Field emitters and arrays, cold electron emitters

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History

Received 14 September 2009
Accepted 9 November 2009
Published online 19 March 2010

Digital Object Identifier

http://dx.doi.org/10.1116/1.3271159

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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