Plasma etch fabrication of 60:1 aspect ratio silicon nanogratings with 200 nm pitch

Mukherjee, Pran; Bruccoleri, Alexander; Heilmann, Ralf K.; Schattenburg, Mark L.; Kaplan, Alex F.; Guo, L. Jay

doi:doi:10.1116/1.3507427

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Journal of Vacuum Science & Technology B / Volume 28 / Issue 6 / PAPERS FROM THE 54th INTERNATIONAL CONFERENCE ON ELECTRON, ION, AND PHOTON BEAM TECHNOLOGY AND NANOFABRICATION / Nanostructures

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J. Vac. Sci. Technol. B 28, C6P70 (2010); http://dx.doi.org/10.1116/1.3507427 (6 pages)

Plasma etch fabrication of 60:1 aspect ratio silicon nanogratings with 200 nm pitch

Pran Mukherjee¹, Alexander Bruccoleri¹, Ralf K. Heilmann¹, Mark L. Schattenburg¹, Alex F. Kaplan², and L. Jay Guo²

¹Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
²The University of Michigan, Ann Arbor, Michigan 48109

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(Published online 2 December 2010)

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The authors present a breakthrough multistage dry-etch process to create 100 nm half-pitch gratings in silicon with depths up to 6 μm. Interference lithography was used to pattern gratings in an optically matched stack of materials to form a 400-nm-thick silicon oxide hard-mask. The oxide was then used to mask the subsequent deep reactive-ion etching of silicon. In this article, the authors describe their grating patterning, pattern transfer, and deep etch processes, and present progress toward combining this technique with coarser scale lithography steps designed to form an integrated mechanical support structure to produce freestanding x-ray diffraction gratings.

ACKNOWLEDGMENTS

This work is supported by NASA under Grant No. NNX08AI62G. The authors would like to thank the facilities support from the Microsystems Technology Laboratories and Nanostructures Laboratory at MIT and the Lurie Nanofabrication Facility at the University of Michigan, in particular, Brian VanDerElzen for his assistance with process development.

Article Outline

INTRODUCTION
FABRICATION SUMMARY
PROCESS DISCUSSION AND RESULTS
CONCLUSIONS

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KEYWORDS and PACS

Keywords

diffraction gratings, elemental semiconductors, masks, nanolithography, nanopatterning, photolithography, silicon, sputter etching, X-ray diffraction, silicon, silicon oxide, photoresist, SF6, C4F8

PACS

81.65.Cf

Surface cleaning, etching, patterning
81.16.Rf

Micro- and nanoscale pattern formation
81.16.Nd

Micro- and nanolithography
85.40.Hp

Lithography, masks and pattern transfer
42.82.Cr

Fabrication techniques; lithography, pattern transfer
52.77.Bn

Etching and cleaning

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History

Received 9 July 2010
Accepted 4 October 2010
Published online 2 December 2010

Digital Object Identifier

http://dx.doi.org/10.1116/1.3507427

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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