Comparison of DC performance of Pt/Ti/Au- and Ni/Au-gated AlGaN/GaN high electron mobility transistors

Liu, Lu; Lo, Chien-Fong; Kang, Tsung-Sheng; Ren, Fan; Pearton, S. J.; Kravchenko, I. I.; Laboutin, O.; Cao, Yu; Johnson, Wayne J.

doi:doi:10.1116/1.3607601

Volume/Page
Keyword
DOI
Citation
Advanced

Volume: Page/Article:

Search Content Type

article doi:

Citation:

You are not logged in to this journal. Log In

Journal of Vacuum Science & Technology B / Volume 29 / Issue 4 / Microelectronic & Nanoelectronic Devices

Previous Article | Next Article

J. Vac. Sci. Technol. B 29, 042202 (2011); http://dx.doi.org/10.1116/1.3607601 (4 pages)

Comparison of DC performance of Pt/Ti/Au- and Ni/Au-gated AlGaN/GaN high electron mobility transistors

Lu Liu¹, Chien-Fong Lo¹, Tsung-Sheng Kang¹, Fan Ren¹, S. J. Pearton², I. I. Kravchenko³, O. Laboutin⁴, Yu Cao⁴, and Wayne J. Johnson⁴

¹Department of Chemical Engineering, University of Florida, Gainesville FL 32611
²Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
³Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37830
⁴Kopin Corporation, Taunton, MA 02780

View Map

(Published online 8 July 2011)

Abstract

References (20)

Article Objects (5)

Alerts
- Alert Me When Cited
- Alert Me When Corrected
Tools
Share
- Email Abstract
- Connotea
- CiteULike
- del.icio.us
- BibSonomy
- Tweet this Article
- Add to Facebook

Full Text: Read Online (HTML) | Download PDF | Rent Article | Buy PDF (US$28) | View Cart

We have demonstrated significant improvements of AlGaN/GaN high electron mobility transistors (HEMTs) dc performance by employing Pt/Ti/Au instead of the conventional Ni/Au gate metallization. During off-state bias stressing, the typical critical voltage for HEMTs with Ni/Au gate metallization was ∼ −45 to −65 V. By sharp contrast, no critical voltage was observed for HEMTs with Pt/Ti/Au gate metallization, even up to −100 V, which was the instrumental limitation in this experiment. After the off-state stressing, the drain current of Ni/Au gated-HEMTs decreased by ∼ 15%. For the Pt-gate HEMTs, no degradation of the drain current occurred and there were minimal changes in the Schottky gate characteristics for both forward and reverse bias conditions. The HEMTs with Pt/Ti/Au metallization showed an excellent drain on/off current ratio of 1.56×10⁸. The on/off drain current ratio of Ni-gated HEMTs was dependent on the drain bias voltage and ranged from 1.16×10⁷ at V_DS = 5 V and 6.29×10⁵ V_DS = 40 V due to the larger gate leakage current at higher drain bias voltage.

ACKNOWLEDGMENTS

The work performed at UF is supported by an AFOSR MURI monitored by Gregg Jessen and Kitt Reinhardt. A portion of this research was conducted at the Center for nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
CONCLUSIONS

View more related articles.

KEYWORDS and PACS

Keywords

aluminium compounds, gallium compounds, gold, high electron mobility transistors, III-V semiconductors, leakage currents, metallisation, platinum, Schottky barriers, titanium, wide band gap semiconductors

PACS

85.30.Tv

Field effect devices

RELATED DATABASES

To view database links for this article, you need to log in.

History

Received 25 February 2011
Accepted 11 June 2011
Published online 8 July 2011

Digital Object Identifier

http://dx.doi.org/10.1116/1.3607601

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

For access to fully linked references, you need to log in.

Figures (4) Tables (1)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)