Current transport mechanisms of InGaN metal-insulator-semiconductor photodetectors

Shao, Z. G.; Chen, D. J.; Liu, B.; Lu, H.; Xie, Z. L.; Zhang, R.; Zheng, Y. D.

doi:doi:10.1116/1.3622298

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Journal of Vacuum Science & Technology B / Volume 29 / Issue 5 / Electronic & Optoelectronic Materials, Devices & Processing

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J. Vac. Sci. Technol. B 29, 051201 (2011); http://dx.doi.org/10.1116/1.3622298 (3 pages)

Current transport mechanisms of InGaN metal-insulator-semiconductor photodetectors

Z. G. Shao, D. J. Chen, B. Liu, H. Lu, Z. L. Xie, R. Zhang, and Y. D. Zheng

Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing National Laboratory of Microstructure, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, People’s Republic of China

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(Published online 11 August 2011)

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The authors report on InGaN metal-insulator-semiconductor (MIS) photodetectors with two different insulating layers of Si₃N₄ and Al₂O₃ deposited via plasma-enhanced chemical vapor deposition and atomic layer deposition, respectively. The photoresponse spectra show that the metal-Al₂O₃-InGaN photodetector exhibits an approximately threefold higher photoelectric responsivity and a larger spectral rejection ratio as compared to the metal-Si₃N₄-InGaN photodetector at a 1 V reverse bias. The current transport mechanisms in MIS photodetectors were investigated in order to determine the difference in photoresponse. The results show that the space charge limited current is a dominant leakage conduction mechanism in the InGaN MIS photodetectors, but this mechanism is mediated by the exponential trap distribution in the metal-Si₃N₄-InGaN photodetector. This indicates a higher density of trap states in the Si₃N₄ bulk. A bidirectional Fowler–Nordheim tunneling effect was observed in the metal-Si₃N₄-InGaN photodetector, which indicates high trap states in the Si₃N₄ bulk and the Si₃N₄–InGaN interface. These traps increase the probability of photogenerated carrier recombination in the bulk of the dielectrics and at the interface of dielectric-InGaN, and hence the photoelectric responsivity is lower.

ACKNOWLEDGMENTS

This work was supported by the NSFC (Grant Nos. 60825401 and 60936004), the Natural Science Foundation of Jiangsu Province (BK2010045, BK2009255, and BK2008019), the National 973 project (2009CB320300 and 2010CB327504), the National 863 project (2007AA06A405), and the Fok Ying Tong Education Foundation (122028).

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
CONCLUSIONS

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KEYWORDS and PACS

Keywords

alumina, atomic layer deposition, electron-hole recombination, III-V semiconductors, MIS devices, photodetectors, plasma CVD, silicon compounds, space charge, tunnelling, wide band gap semiconductors

PACS

85.60.Gz

Photodetectors (including infrared and CCD detectors)

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History

Received 27 April 2011
Accepted 24 June 2011
Published online 11 August 2011

Digital Object Identifier

http://dx.doi.org/10.1116/1.3622298

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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