Large-area suspended graphene on GaN nanopillars

Lee, Chongmin; Kim, Byung-Jae; Ren, Fan; Pearton, S. J.; Kim, Jihyun

doi:doi:10.1116/1.3654042

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Journal of Vacuum Science & Technology B / Volume 29 / Issue 6 / Letters

J. Vac. Sci. Technol. B 29, 060601 (2011); http://dx.doi.org/10.1116/1.3654042 (5 pages)

Large-area suspended graphene on GaN nanopillars

Chongmin Lee¹, Byung-Jae Kim¹, Fan Ren², S. J. Pearton³, and Jihyun Kim¹

¹Department of Chemical & Biological Engineering, Korea University, Seoul 136-701, South Korea
²Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611
³Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611

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(Published online 26 October 2011)

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The authors have demonstrated large-area suspended graphene on GaN nanopillars predefined by nanosphere lithography and inductively coupled plasma etching. The graphene was successfully suspended over large areas without ripples and corrugations. Scanning electron microscopy, atomic force microscopy and micro-Raman spectroscopy were used to characterize the properties of the suspended graphene on nanopillars. The thermal properties of the suspended and supported graphene were investigated by varying the underlying GaN nanopilllar geometries from flat-top to sharp-cone morphologies and heating the resulting structures via irradiation with laser powers of 1.53 mW, 8.03 mW, and 16.19 mW. The heat transfer was effective even when the contact area between the suspended graphene and the supporting substrate was small, due to the high thermal conductivities of graphene and GaN. The extremely high thermal conductivity of the graphene can improve the thermal management in GaN-based high power electronic and optoelectronics devices, a critical factor for their long-term reliability.

ACKNOWLEDGMENTS

This research was supported by New & Renewable Energy R&D program (R0903962) under the Ministry of Knowledge Economy, Basic Science Research Program (2009-0088551 and 2010-0008242) through the National Research Foundation of Korea, and by the Carbon Dioxide Reduction and Sequestration Center, a 21st Century Frontier R&D Program funded by the Ministry of Education, Science and Technology. The work at UF is partially funded by an AFOSR MURI monitored by Gregg Jessen.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
SUMMARY AND CONCLUSIONS

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KEYWORDS and PACS

Keywords

atomic force microscopy, gallium compounds, graphene, heat transfer, III-V semiconductors, nanofabrication, nanolithography, nanostructured materials, radiation effects, Raman spectra, scanning electron microscopy, sputter etching, thermal conductivity, wide band gap semiconductors

PACS

81.16.Nd

Micro- and nanolithography
81.65.Cf

Surface cleaning, etching, patterning
66.70.-f

Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
61.46.-w

Structure of nanoscale materials
68.37.Ps

Atomic force microscopy (AFM)
78.30.Fs

III-V and II-VI semiconductors

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History

Received 12 August 2011
Accepted 1 October 2011
Published online 26 October 2011

Digital Object Identifier

http://dx.doi.org/10.1116/1.3654042

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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