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Journal of Vacuum Science & Technology B / Volume 29 / Issue 6 / Review Article

J. Vac. Sci. Technol. B 29, 060801 (2011); http://dx.doi.org/10.1116/1.3641913 (21 pages)

Functional semiconductor nanowires via vapor deposition

Jian Shi and Xudong Wang

Department of Materials Science and Engineering, University of Wisconsin – Madison, 1509 University Ave., Madison, Wisconsin 53706

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(Published online 27 September 2011)

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More than a decade’s worth of research has led to significant progress toward an understanding of the growth behavior of nanowires (NWs). Among all of the different bottom-up and top-down strategies, vapor deposition has unique advantages in producing high quality NW structures. This paper reviews the current understandings of the thermodynamics and kinetics of NW nucleation and growth behaviors using a vapor deposition approach. NW deposition from the vapor phase is divided into two general categories: that with and that without foreign metal catalysts. The distinct crystal nucleation and growth mechanisms, NW morphologies, and controlling parameters of these two categories are presented in detail and compared. In addition, ways to apply these strategies in order to realize complex NW structures such as NW heterojunctions and 3D NW networks are also discussed. The information about NW vapor deposition reviewed in this paper provides a comprehensive background for understanding NW growth phenomena, ways of achieving morphology and property control, and how to eventually pave the road toward industrial-level NW manufacturing.

© 2011 American Vacuum Society

ACKNOWLEDGMENTS

The authors thank C. Sun, M. Starr, F. Wang, and S. Grutzik for their contributions to the work reviewed in this article. We also are grateful for the support from the National Science Foundation under Grant No. DMR-0905914 CMMI-0926245, 3M, and UW-Madison graduate school.

Article Outline

  1. INTRODUCTION
  2. CURRENT SUCCESS OF VAPOR DEPOSITION FOR NW GROWTH
  3. VAPOR DEPOSITION OF NWs WITH FOREIGN CATALYSTS
    1. General VLS growth of NWs
    2. Nucleation of NWs from catalysts
    3. Interface between the catalyst and the NW
    4. Growth rate and length control
    5. Substrate-related NW growth model
  4. VAPOR DEPOSITION OF NWs WITHOUT CATALYSTS
    1. Vapor-solid deposition of 1D nanostructures
    2. Screw-dislocation driven NW growth
    3. Active surface mechanism
    4. Self-catalyzed mechanism
    5. theoretical model for NW growth without foreign catalysts
  5. COMPLEX NW STRUCTURES FROM VAPOR DEPOSITION
    1. NW supperlattice structures
    2. NW-based nanoarchitectures
  6. FUNCTIONALITY FROM GROWTH CONTROL
  7. CONCLUSION

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KEYWORDS and PACS

Keywords

crystal growth, crystal morphology, nanowires, nucleation, semiconductor quantum wires, thermodynamics, vapour deposition

PACS

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History
Received 6 July 2011
Accepted 28 August 2011
Published online 27 September 2011
Digital Object Identifier
http://dx.doi.org/10.1116/1.3641913

PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

Publisher

American Vacuum Society

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