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Journal of Vacuum Science & Technology B / Volume 29 / Issue 6 / Lithography

J. Vac. Sci. Technol. B 29, 061604 (2011); http://dx.doi.org/10.1116/1.3662000 (8 pages)

Method to pattern etch masks in two inclined planes for three-dimensional nano- and microfabrication

R. Willem Tjerkstra1, Léon A. Woldering1, Johanna M. van den Broek1, Fred Roozeboom2, Irwan D. Setija3, and Willem L. Vos4

1Complex Photonic Systems (COPS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
2Group Plasma & Materials Processing, Dept. of Applied Physics, Eindhoven Univ. of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands and TNO Science and Industry, De Rondom 1, PO Box 6235, 5600 HE Eindhoven, The Netherlands
3ASML Netherlands B.V., De Run 6501, 5504 DR Veldhoven, The Netherlands
4Complex Photonic Systems (COPS), MESA+Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands

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(Published online 5 December 2011)

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The authors present a method to pattern etch masks for arbitrary nano- and microstructures on different, inclined planes of a sample. Our method allows standard CMOS fabrication techniques to be used in different inclined planes; thus yielding three-dimensional structures with a network topology. The method involves processing of the sample in a first plane, followed by mounting the prepared sample in a specially designed silicon holder wafer such that the second, inclined plane is exposed to continued processing. As a proof of principle we demonstrate the fabrication of a patterned chromium etch mask for three-dimensional photonic crystals in silicon. The etch mask is made on the 90° inclined plane of a silicon sample that already contains high aspect ratio nanopores. The etch mask is carefully aligned with respect to these pores, with a high translational accuracy of <30 nm along the y-axis and a high rotational accuracy of 0.71° around the z-axis of the crystal. Such high alignment precisions are crucial for nanophotonics and for sub-micrometer applications in general. Although we limit ourselves to processing on two planes of a sample, it is in principle possible to repeat the presented method on more planes. The authors foresee potential applications of this technique in, e.g., microfluidics, photonics, and three-dimensional silicon electronics.

© 2011 American Vacuum Society

ACKNOWLEDGMENTS

The authors thank Ruud Balkenende and John Kelly for useful and pleasant discussions in the early stages of this research. Theo Punt is acknowledged for laser cutting, Rico Keim for polishing experiments, and Frans Segerink for assistance with focused ion beam milling. This research was supported by NanoNed, a nanotechnology program of the Dutch Ministry of Economic Affairs, and this work is part of the research program of the Stichting voor Fundamenteel Onderzoek der Materie (FOM), which is financially supported by the Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO). This work is also supported by a VICI fellowship from the Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO) to WLV.

Article Outline

  1. INTRODUCTION
  2. PROCESS SCHEME
  3. EXPERIMENTAL DETAILS
    1. Fabrication of the holder and sample size limitations
    2. Preparation of the first nanostructure
    3. Application and patterning of the chromium etch mask on the second, inclined plane
  4. RESULTS AND DISCUSSION
    1. Preparation of the samples containing the first nanopattern of pores
    2. Mounting the sample in the holder
    3. Application and patterning of the chromium etch mask on the second, inclined plane
  5. CONCLUSIONS

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KEYWORDS and PACS

Keywords

crystal microstructure, elemental semiconductors, etching, microfabrication, nanofabrication, nanopatterning, nanophotonics, photonic crystals, silicon

PACS

  • 81.16.Rf

    Micro- and nanoscale pattern formation

  • 81.65.Cf

    Surface cleaning, etching, patterning

RELATED DATABASES

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History
Received 28 June 2011
Accepted 6 October 2011
Published online 5 December 2011
Digital Object Identifier
http://dx.doi.org/10.1116/1.3662000

PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

Publisher

American Vacuum Society

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