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Journal of Vacuum Science & Technology B / Volume 29 / Issue 6 / The 55th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication / Resists

J. Vac. Sci. Technol. B 29, 06FJ01 (2011); http://dx.doi.org/10.1116/1.3644339 (5 pages)

In situ study of hydrogen silsesquioxane dissolution rate in salty and electrochemical developers

Katherine J. Harry1, Sebastian Strobel2, Joel K. W. Yang3, Huigao Duan3, and Karl K. Berggren4

1Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 and Department of Chemical and Petroleum Engineering, The University of Kansas, Lawrence, Kansas 66044
2Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
3Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore 117602
4Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 and Kavli Institute of Nanoscience, Technical University of Delft, Delft, The Netherlands

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(Published online 29 September 2011)

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In order to better characterize the development of the electron-beam resist hydrogen silsesquioxane (HSQ), the authors used a quartz crystal microbalance (QCM) to study its rate of dissolution in situ. The authors determined the effect of both salt concentration and applied electric potential on the development rate of HSQ. The development rates were measured by spinning HSQ directly onto a quartz crystal resonator, and then developing in a QCM microfluidic module. In order to more directly observe the effect of electric potentials on the HSQ development rate, a film of HSQ was partially cross-linked in an O2 plasma asher and then developed in the QCM flow module with a salt-free NaOH solution. As the partially cross-linked HSQ slowly developed, electric potentials were applied and removed from the crystal allowing the observation of how the development rate increased upon the application of a positive electric potential. The increased development rate caused by both the addition of salt ions and a positive electric potential suggests that the rate may be limited by a build-up of negative charge on the HSQ.

© 2011 American Vacuum Society

ACKNOWLEDGMENTS

The authors would like to thank Jim Daley and Mark Mondol for making this work possible by sharing their fabrication expertise, and Michael Rooks for helpful conversations. The Scanning Electron Beam Lithography facility at the Research Laboratory of Electronics at MIT (SEBL at RLE) was used for sample exposures and imaging and the Nanostructures Laboratory (NSL) at MIT was used for sample processing. Financial support was provided by the National Science Foundation, the Center for Materials Science and Engineering, the Materials Processing Center at MIT, and the King Abdulaziz Center of Science and Technology.

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION
  4. SUMMARY AND CONCLUSIONS

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KEYWORDS and PACS

Keywords

dissolving, electrochemistry, electron resists, microfluidics, nanolithography, organic compounds, sputter etching, thin films

PACS

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History
Received 23 June 2011
Accepted 3 September 2011
Published online 29 September 2011
Digital Object Identifier
http://dx.doi.org/10.1116/1.3644339

PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

Publisher

American Vacuum Society

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