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J. Vac. Sci. Technol. B 30, 011806 (2012); http://dx.doi.org/10.1116/1.3676054 (6 pages)

Roughness optimization of electron-beam exposed hydrogen silsesquioxane for immobilization of DNA origami

Faisal A. Shah1, Kyoung Nan Kim2, Marya Lieberman2, and Gary H. Bernstein1

1Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556
2Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556

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(Published online 12 January 2012)

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A novel way to immobilize deoxyribonucleic acid (DNA) origami on a conventional substrate using hydrogen silsesquioxane (HSQ) as a functionalized platform is demonstrated. An alternative approach to quantifying roughness of the HSQ surfaces for 2D DNA origami immobilization is also introduced. Effects of oxygen plasma treatment on the surface roughness and functionalization (for DNA origami immobilization) of exposed and developed HSQ patterns are characterized. Surface root mean square roughness of electron-beam exposed HSQ with various thicknesses is investigated and optimized down to 0.2 nm for ultrathin (sub-15 nm) HSQ patterns.

© 2012 American Vacuum Society

ACKNOWLEDGMENT

This research was supported by the Office of Naval Research (ONR) Grant No. N-00014-09-1-0184.

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
    1. HSQ thickness versus roughness
    2. Oxygen plasma treatment
    3. DNA origami immobilization
      1. Synthesis
      2. Deposition
  3. ROUGHNESS MEASUREMENT
  4. RESULTS AND DISCUSSION
  5. SUMMARY AND CONCLUSIONS

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ISSN

1071-1023 (print)  
1520-8567 (online)

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