Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers

Jeon, Joon-Woo; Yum, Woong-Sun; Seong, Tae-Yeon; Youl Lee, Sang; Song, June-O

doi:doi:10.1116/1.3678490

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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / Letters

J. Vac. Sci. Technol. B 30, 020601 (2012); http://dx.doi.org/10.1116/1.3678490 (4 pages)

Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers

Joon-Woo Jeon¹, Woong-Sun Yum¹, Tae-Yeon Seong¹, Sang Youl Lee², and June-O Song²

¹Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea
²Department of LED Business, Chip Development Group, LG Innotek, Gwangju 506-251, Korea

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(Published online 24 January 2012)

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The authors report on the formation of highly reliable Ti/Al-based ohmic contacts to N-face n-GaN for high-performance vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers. The Ti(Ga) solid solution layer is used to minimize the outdiffusion of Ga atoms from the n-GaN surface region. Unlike the Ti/Al contacts, the Ti(Ga)/Ti/Al and Ti(Ga)/TiN/Al samples exhibit ohmic behavior with contact resistivities of 3.9 – 4.8 × 10⁻⁴ Ωcm² after annealing at 250 °C. It was further shown that unlike the Ti(Ga)/TiN/Al samples, the Ti/Al and the Ti(Ga)/Ti/Al samples are largely electrically degraded when annealed at 300 °C in an oven. Based on x-ray photoemission spectroscopy and secondary ion mass spectrometry results, ohmic formation and degradation mechanisms are briefly described and discussed.

ACKNOWLEDGMENTS

This work was supported by the World Class University program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (MEST) (Grant No. R33-2008-000-10025-0), and the Industrial Technology Development Program funded by the Ministry of Knowledge Economy (MKE), Korea.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
SUMMARY AND CONCLUSIONS

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KEYWORDS and PACS

Keywords

aluminium, annealing, contact resistance, electrical resistivity, gallium alloys, light emitting diodes, ohmic contacts, secondary ion mass spectra, solid solutions, titanium, titanium alloys, titanium compounds, X-ray photoelectron spectra

PACS

85.60.Jb

Light-emitting devices
84.32.Dd

Connectors, relays, and switches

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History

Received 17 October 2011
Accepted 1 January 2012
Published online 24 January 2012

Digital Object Identifier

http://dx.doi.org/10.1116/1.3678490

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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