Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF3 and CF4 surface treatment

Chen, C. H.; Yang, C. W.; Chiu, H. C.; Fu, Jeffrey. S.

doi:doi:10.1116/1.3680115

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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / Electronic & Optoelectronic Materials, Devices & Processing

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J. Vac. Sci. Technol. B 30, 021201 (2012); http://dx.doi.org/10.1116/1.3680115 (6 pages)

Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF₃ and CF₄ surface treatment

C. H. Chen, C. W. Yang, H. C. Chiu, and Jeffrey. S. Fu

Department of Electronics Engineering, Chang Gung University, Taoyuan 33302, Taiwan

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(Published online 1 February 2012)

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In this study, enhancement-mode (E-mode) AlGaN/GaN HEMTs that underwent CHF₃ and CF₄ plasma treatment beneath the gate metal were fabricated. These treatments were applied because, although previous studies have formed AlF₃ compound layers after fluorine-based plasma treatment to suppress the polarization-induced charge density, the surface negative charges still influenced the device gate leakage current and trap density. In the device in this study, unlike in previous CF₄ plasma-treated GaN E-mode devices, the hydrogen atoms of the CHF₃ plasma were introduced to compensate for vacancies by donating an electron to a vacancy acceptor level, thereby reducing the number of vacancy induced traps. Based on the measured subthreshold slope (SS) and the effective interface state density (D_it) results, the SS value of a CHF₃-treated HEMT was 80 mV/decade and the D_it was 1.23 × 10¹² cm⁻². Moreover, the CHF₃-treated HEMT exhibited a current gain cut-off frequency, a maximum oscillation frequency, and an output power of 6.7, 26, and 14.8 dBm (302 mW/mm), respectively. The 1/f noise measurement results of the CHF₃-treated HEMT indicated that the flicker noise-induced generation-recombination noise and gate leakage-induced generation-recombination noise were also improved. Therefore, the CHF₃-treated HEMT has great potential for use in low-distortion power amplifiers and logic control circuits.

ACKNOWLEDGMENTS

The authors would like to thank Nano Device Labs (NDL) for low frequency noise measurements. This work was financially supported by the National Science Council, ROC (Grant No. NSC-100-2221-E-182-009) and facility supports of High Speed Intelligent Communication (HSIC) Research Center of Chang Gung University, Taoyuan, Taiwan.

Article Outline

INTRODUCTION
DEVICE STRUCTURE AND FABRICATION
MEASUREMENT RESULTS AND DISCUSSION
SUMMARY AND CONCLUSIONS

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KEYWORDS and PACS

Keywords

aluminium compounds, electron mobility, gallium compounds, high electron mobility transistors, III-V semiconductors, leakage currents, noise measurement, plasma materials processing, surface treatment, wide band gap semiconductors

PACS

85.30.Tv

Field effect devices

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History

Received 6 September 2011
Accepted 27 November 2011
Published online 1 February 2012

Digital Object Identifier

http://dx.doi.org/10.1116/1.3680115

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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