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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / Microelectronic & Nanoelectronic Devices

J. Vac. Sci. Technol. B 30, 022202 (2012); http://dx.doi.org/10.1116/1.3679412 (5 pages)

Work function extraction of metal gates with alternate channel materials

Mary Coan1, Derek Johnson2, Jung Hwan Woo2, Nivedita Biswas3, Veena Misra3, Prashant Majhi4, and H. Rusty Harris2

1Texas A&M University, Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843 and Texas A&M University, Artie McFerrin Department of Chemical Engineering, Texas A&M University, College Station, Texas 77843
2Texas A&M University, Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843
3North Carolina State University, Department of Electrical and Computer Engineering, Raleigh, North Carolina 27695
4SEMATECH, Austin, Texas 78741

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(Published online 8 February 2012)

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The effects of a heterojunction on the effective work function in a metal/high κ gate stack are studied and a new structure developed for the extraction of the work function. It is found that when a Ge/Si heterostructure on silicon is low doped and sufficiently thin, then the work function can be extracted in a manner similar to that on a simple silicon substrate. Modifications to the terraced oxide structure are proposed to remove oxidation effects of the alternate channel materials. The extracted work function of thickness variation of TiN is found to be in agreement with that of TiN on a silicon substrate.

© 2012 American Vacuum Society

ACKNOWLEDGMENT

Financial support from the National Excellence Fellowship and NSF Grant Nos. 1028910 and 0901699 is gratefully acknowledged.

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION
  4. SUMMARY AND CONCLUSIONS

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KEYWORDS and PACS

Keywords

Ge-Si alloys, oxidation, semiconductor heterojunctions, semiconductor materials, work function

PACS

  • 81.05.Hd

    Other semiconductors

  • 73.30.+y

    Surface double layers, Schottky barriers, and work functions

  • 73.40.Lq

    Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

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History
Received 20 September 2011
Accepted 18 December 2011
Published online 8 February 2012
Digital Object Identifier
http://dx.doi.org/10.1116/1.3679412

PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

Publisher

American Vacuum Society

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