Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit

Hoke, W. E.; Chelakara, R. V.; Bettencourt, J. P.; Kazior, T. E.; LaRoche, J. R.; Kennedy, T. D.; Mosca, J. J.; Torabi, A.; Kerr, A. J.; Lee, H.-S.; Palacios, T.

doi:doi:10.1116/1.3665220

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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / 28th North American Molecular Beam Epitaxy Conference

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J. Vac. Sci. Technol. B 30, 02B101 (2012); http://dx.doi.org/10.1116/1.3665220 (6 pages)

Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit

W. E. Hoke¹, R. V. Chelakara¹, J. P. Bettencourt¹, T. E. Kazior¹, J. R. LaRoche¹, T. D. Kennedy¹, J. J. Mosca¹, A. Torabi¹, A. J. Kerr¹, H.-S. Lee², and T. Palacios²

¹Raytheon Company, Andover, Massachusetts 01810
²Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

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(Published online 6 December 2011)

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GaN high electron mobility transistors (HEMTs) were monolithically integrated with silicon CMOS to create a functional current mirror circuit. The integrated circuit was fabricated on 100 mm diameter modified silicon-on-insulator (SOI) wafers incorporating a resistive (111) silicon handle substrate and a lightly doped (100) silicon device layer. In a CMOS-first process, the CMOS was fabricated using the (100) device layer. Subsequently GaN was grown by plasma molecular beam epitaxy in windows on the (111) handle substrate surface without wire growth despite using gallium-rich growth conditions. Transmission lines fabricated on the GaN buffer/SOI wafer exhibited a microwave loss of less than 0.2 dB/mm up to 35 GHz. Direct current measurements on GaN HEMTs yielded a current density of 1.0 A/mm and transconductance of 270 mS/mm. At 10 GHz and a drain bias of 28 V, 1.25 mm long transistors demonstrated a small signal gain of 10.7 dB and a maximum power added efficiency of 53% with a concomitant power of 5.6 W. The silicon and GaN transistors were interconnected to form high yield test interconnect daisy chains and a monolithic current mirror circuit. The CMOS output drain current controlled the GaN transistor quiescent current and consequently the microwave gain.

ACKNOWLEDGMENT

This work is supported in part by the DARPA GaN-Si CMOS Heterogeneous Integration Advanced Study Program (Contract No. FA86500-10-C-7055 monitored by James Sewell).

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS
SUMMARY

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KEYWORDS and PACS

Keywords

CMOS analogue integrated circuits, current density, current mirrors, elemental semiconductors, field effect MMIC, gallium compounds, HEMT integrated circuits, high electron mobility transistors, III-V semiconductors, integrated circuit interconnections, molecular beam epitaxial growth, plasma materials processing, silicon, wide band gap semiconductors

PACS

85.40.Ls

Metallization, contacts, interconnects; device isolation
85.30.Tv

Field effect devices
84.30.Le

Amplifiers

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History

Received 25 August 2011
Accepted 5 November 2011
Published online 6 December 2011

Digital Object Identifier

http://dx.doi.org/10.1116/1.3665220

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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