InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE

Skierbiszewski, C.; Siekacz, M.; Turski, H.; Muzioł, G.; Sawicka, M.; Feduniewicz-Żmuda, A.; Smalc-Koziorowska, J.; Perlin, P.; Grzanka, S.; Wasilewski, Z. R.; Kucharski, R.; Porowski, S.

doi:doi:10.1116/1.3665223

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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / 28th North American Molecular Beam Epitaxy Conference

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J. Vac. Sci. Technol. B 30, 02B102 (2012); http://dx.doi.org/10.1116/1.3665223 (5 pages)

InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE ^a

^a This article is based on material presented at the 28th North America Molecular Beam Epitaxy Conference, San Diego, CA, August 14–17, 2011.

C. Skierbiszewski¹, M. Siekacz¹, H. Turski², G. Muzioł², M. Sawicka¹, A. Feduniewicz-Żmuda², J. Smalc-Koziorowska¹, P. Perlin¹, S. Grzanka², Z. R. Wasilewski³, R. Kucharski⁴, and S. Porowski²

¹Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland, and TopGaN Sp. z o.o., Sokołowska 29/37, 01-142 Warsaw, Poland
²Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
³Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Canada
⁴Ammono Sp. z o.o., Czerwonego Krzyżza 2/31, 00-377 Warsaw, Poland

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(Published online 6 December 2011)

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This work demonstrates the first true blue laser diodes (LDs) grown by plasma assisted molecular beam epitaxy that operate at the region of 450–460 nm. The single quantum well LDs were grown on several types of c-plane bulk GaN substrates, with threading dislocation densities varying from 10⁴ to 10⁸cm⁻². The key factors that allowed the authors to achieve lasing in true-blue wavelengths are improvements in the growth technology of the InGaN quantum wells attributed to the high nitrogen flux used and the design of the LD structure, which reduced the light losses in the cavity. The authors discuss the influence of the diodes’ design on the parameters of LDs.

ACKNOWLEDGMENTS

This work was supported partially by the Polish Ministry of Science and Higher Education Grant No. IT 13426, the European Union within European Regional Development Fund, through Grant Innovative Economy (POIG.01.01.02-00-008/08) and SINOPLE Grant No. 230765.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
SUMMARY AND CONCLUSIONS

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KEYWORDS and PACS

Keywords

dislocation density, gallium compounds, III-V semiconductors, indium compounds, molecular beam epitaxial growth, plasma materials processing, quantum well lasers, semiconductor quantum wells, wide band gap semiconductors

PACS

85.35.Be

Quantum well devices (quantum dots, quantum wires, etc.)
42.55.Px

Semiconductor lasers; laser diodes
42.60.By

Design of specific laser systems

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History

Received 3 October 2011
Accepted 5 November 2011
Published online 6 December 2011

Digital Object Identifier

http://dx.doi.org/10.1116/1.3665223

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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