Characterization of Bi2Te3 and Bi2Se3 topological insulators grown by MBE on (001) GaAs substrates

Liu, Xinyu; Smith, David J.; Cao, Helin; Chen, Yong P.; Fan, Jin; Zhang, Yong-Hang; Pimpinella, Richard E.; Dobrowolska, Malgorzata; Furdyna, Jacek K.

doi:doi:10.1116/1.3668082

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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / 28th North American Molecular Beam Epitaxy Conference

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J. Vac. Sci. Technol. B 30, 02B103 (2012); http://dx.doi.org/10.1116/1.3668082 (4 pages)

Characterization of Bi₂Te₃ and Bi₂Se₃ topological insulators grown by MBE on (001) GaAs substrates

Xinyu Liu¹, David J. Smith², Helin Cao³, Yong P. Chen³, Jin Fan⁴, Yong-Hang Zhang⁵, Richard E. Pimpinella¹, Malgorzata Dobrowolska¹, and Jacek K. Furdyna¹

¹Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556
²Department of Physics, Arizona State University, Tempe, Arizona 85287
³Department of Physics, Purdue University, West Lafayette, Indiana 47907
⁴Department of Physics, Arizona State University, Tempe, Arizona 85287 and Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287
⁵Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 and School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287

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(Published online 9 December 2011)

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Films of pseudohexagonal Bi₂Te₃, Bi₂Se₃ and their alloys were successfully grown by molecular beam epitaxy on GaAs (001) substrates. The growth mechanism and structural properties of these films were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction (XRD), high-resolution transmission electron microscopy, and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform and are of high crystalline quality.

ACKNOWLEDGMENTS

This work was supported by NSF Grant No. DMR10-05851 (ND); NSF Grant No. ECCS10-02114 and an AFOSR Grant No. FA9550-10-1-0129 (ASU); and DARPA MESO program (Purdue). The authors acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.

Article Outline

INTRODUCTION
FABRICATION AND EXPERIMENTAL DETAILS
RESULTS AND DISCUSSION
SUMMARY

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KEYWORDS and PACS

Keywords

atomic force microscopy, bismuth compounds, epitaxial layers, insulating thin films, molecular beam epitaxial growth, Raman spectra, reflection high energy electron diffraction, topological insulators, transmission electron microscopy, X-ray diffraction

PACS

81.15.Hi

Molecular, atomic, ion, and chemical beam epitaxy
78.66.Nk

Insulators
78.30.Hv

Other nonmetallic inorganics
68.55.aj

Insulators

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History

Received 16 September 2011
Accepted 20 November 2011
Published online 9 December 2011

Digital Object Identifier

http://dx.doi.org/10.1116/1.3668082

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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