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J. Vac. Sci. Technol. B 30, 02B104 (2012); http://dx.doi.org/10.1116/1.3668088 (7 pages)

Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7–4.9 μm infrared materials

Asli Yildirim and John P. Prineas

Department of Physics and Astronomy, and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242

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(Published online 13 December 2011)

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Thick 2 um Ga1-xInxAsySb1-y layers lattice-matched to (100)-GaSb were grown by molecular beam epitaxy across the compositional range x = 0 to 1. By lowering the growth temperature to the 410 – 450 C range, phase separation was suppressed throughout the miscibility gap, as evidenced in measurements such as photoluminescence, high-resolution x-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. Bright photoluminescence was recorded in the sample series ranging from 1.7 to 4.9 ums.

© 2012 American Vacuum Society

ACKNOWLEDGMENT

The authors gratefully acknowledge funding for this research by the National Science Foundation under Grant No. DMR 100-6956 .

Article Outline

  1. INTRODUCTION
  2. METHODS
  3. RESULTS
  4. DISCUSSION
  5. SUMMARY

KEYWORDS and PACS

PACS

  • 81.05.Ea

    III-V semiconductors

  • 64.75.Qr

    Phase separation and segregation in semiconductors

  • 78.55.Cr

    III-V semiconductors

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

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PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

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