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J. Vac. Sci. Technol. B 30, 02B105 (2012); http://dx.doi.org/10.1116/1.3670749 (4 pages)

Structural and luminescent properties of bulk InAsSb

W. L. Sarney1, S. P. Svensson1, H. Hier1, G. Kipshidze2, D. Donetsky2, D. Wang2, L. Shterengas2, and G. Belenky2

1U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, 2800 Powder Mill Road, Adelphi, Maryland 20783
2Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, New York 11794

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(Published online 21 December 2011)

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The strong bandgap bowing in the InAsxSb1−x alloy system allows it to potentially be used for infrared photodetection in the middle and long wavelength range. The authors have used compositionally graded metamorphic buffer layers to accommodate the misfit strain between InAsxSb1−x alloys and GaSb and InSb substrates in order to reach the long wave infrared range. In this work, we present the characterization of metamorphically grown InAsxSb1−x films that demonstrate strong photoluminescence in the spectral range from 5 to 9 μm.

© 2012 American Vacuum Society

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION
    1. Structural characteristics of graded buffer layers on GaSb substrates
    2. InAs x Sb 1− x grown on InSb substrates
    3. Optical characterization of InAs x Sb 1− x layers
  4. SUMMARY

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1071-1023 (print)  
1520-8567 (online)

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