Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy

Ouyang, Lu; Steenbergen, Elizabeth H.; Zhang, Yong-Hang; Nunna, Kalyan; Huffaker, Diana L.; Smith, David J.

doi:doi:10.1116/1.3672026

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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / 28th North American Molecular Beam Epitaxy Conference

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J. Vac. Sci. Technol. B 30, 02B106 (2012); http://dx.doi.org/10.1116/1.3672026 (5 pages)

Structural properties of InAs/InAs_1–xSb_x type-II superlattices grown by molecular beam epitaxy

Lu Ouyang¹, Elizabeth H. Steenbergen², Yong-Hang Zhang², Kalyan Nunna³, Diana L. Huffaker³, and David J. Smith⁴

¹Department of Physics, Arizona State University, Tempe, Arizona 85287
²School of Electrical, Computer and Energy Engineering and Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287
³California NanoSystems Institute, University of California, Los Angeles, California 90095
⁴Department of Physics and Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287

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(Published online 21 December 2011)

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Strain-balanced InAs/InAs_1−xSb_x type-II superlattices (SLs) have been proposed for possible long-wavelength infrared applications. This paper reports a detailed structural characterization study of InAs/InAs_1−xSb_x SLs with varied Sb composition grown on GaSb (001) substrates by modulated and conventional molecular beam epitaxy (MBE). X-ray diffraction was used to determine the SL periods and the average composition of the InAs_1−xSb_x alloy layers. Cross-section transmission electron micrographs revealed the separate In(As)Sb/InAs(Sb) ordered-alloy layers within individual InAs_1−xSb_x layers for SLs grown by modulated MBE. For the SLs grown by conventional MBE, examination by high-resolution electron microscopy revealed that interfaces for InAs_1−xSb_x deposited on InAs were more abrupt, relative to InAs deposited on InAs_1−xSb_x: this feature was attributed to Sb surfactant segregation occurring during the SL growth. Overall, these results establish that strain-balanced SL structures with excellent crystallinity can be achieved with proper design (well thickness versus Sb composition) and suitably optimized growth conditions.

ACKNOWLEDGMENTS

The work at ASU was primarily supported by the MURI Grant No. W911NF-10-1-0524 administered by U.S. Army Research Office, and monitored by William W. Clark. The authors gratefully acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.

Article Outline

INTRODUCTION
EXPERIMENTAL DETAILS
RESULTS AND DISCUSSTION
SUMMARY

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KEYWORDS and PACS

Keywords

III-V semiconductors, indium compounds, molecular beam epitaxial growth, segregation, semiconductor growth, semiconductor superlattices, surfactants, transmission electron microscopy, X-ray diffraction

PACS

81.15.Hi

Molecular, atomic, ion, and chemical beam epitaxy
82.70.Uv

Surfactants, micellar solutions, vesicles, lamellae, amphiphilic systems, (hydrophilic and hydrophobic interactions)

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History

Received 20 September 2011
Accepted 3 December 2011
Published online 21 December 2011

Digital Object Identifier

http://dx.doi.org/10.1116/1.3672026

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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