Strain-balanced InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates

Steenbergen, Elizabeth H.; Nunna, Kalyan; Ouyang, Lu; Ullrich, Bruno; Huffaker, Diana L.; Smith, David J.; Zhang, Yong-Hang

doi:doi:10.1116/1.3672028

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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / 28th North American Molecular Beam Epitaxy Conference

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J. Vac. Sci. Technol. B 30, 02B107 (2012); http://dx.doi.org/10.1116/1.3672028 (5 pages)

Strain-balanced InAs/InAs_1−xSb_x type-II superlattices grown by molecular beam epitaxy on GaSb substrates

Elizabeth H. Steenbergen¹, Kalyan Nunna², Lu Ouyang³, Bruno Ullrich⁴, Diana L. Huffaker², David J. Smith⁵, and Yong-Hang Zhang¹

¹Center for Photonics Innovation and School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287
²California NanoSystems Institute, University of California, Los Angeles, California 90095
³Department of Physics, Arizona State University, Tempe, Arizona 85287
⁴Air Force Research Lab, Materials & Manufacturing Directorate, Wright Patterson AFB, Ohio 45433-7707
⁵Department of Physics and Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287

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(Published online 21 December 2011)

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Strain-balanced InAs/InAs_1−xSb_x type-II superlattices (SLs) on GaSb substrates with 0.27 ≤ x ≤0.33 were grown by molecular beam epitaxy and demonstrated photoluminescence (PL) up to 11.1 μm. The calculated SL bandgap energies agree with the PL peaks to within 5 meV for long-wavelength infrared samples (9.5, 9.9, and 11.1 μm) and to within 9 meV for a mid-wavelength infrared sample (5.9 μm). X-ray diffraction measurements reveal average SL mismatches of less than 0.2%, and the PL full-width-at-half-maximums increase with the mismatch, confirming the importance of strain-balancing for material quality.

ACKNOWLEDGMENTS

This paper is based upon work supported in part by the U. S. Army Research Laboratory and the U. S. Army Research Office MURI program under Grant No. W911NF-10-1-0524 and Air Force Office of Scientific Research Grant No. (FA9550-10-1-0129). PL experiments were performed at AFRL/RXPS with the support of G. Brown. E.H.S. appreciates the DOD SMART and SFAz scholarships and acknowledges the ASU Office of the Vice-President for Research and Economic Affairs, the Graduate Research Support Program, and the Graduate College.

Article Outline

INTRODUCTION
MODELING
EXPERIMENT
1. Molecular beam epitaxy growth
2. Characterization
RESULTS AND DISCUSSION
1. X-ray diffraction
2. Transmission electron microscopy
3. Photoluminescence
SUMMARY AND CONCLUSIONS

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KEYWORDS and PACS

Keywords

antimony alloys, energy gap, gallium alloys, III-V semiconductors, molecular beam epitaxial growth, photoluminescence, semiconductor superlattices, X-ray diffraction

PACS

81.15.Hi

Molecular, atomic, ion, and chemical beam epitaxy
68.65.Cd

Superlattices
71.20.Nr

Semiconductor compounds
78.55.Cr

III-V semiconductors

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History

Received 26 October 2011
Accepted 3 December 2011
Published online 21 December 2011

Digital Object Identifier

http://dx.doi.org/10.1116/1.3672028

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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