Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy

Luna, E.; Hey, R.; Trampert, A.

doi:doi:10.1116/1.3672022

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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / 28th North American Molecular Beam Epitaxy Conference

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J. Vac. Sci. Technol. B 30, 02B108 (2012); http://dx.doi.org/10.1116/1.3672022 (5 pages)

Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy

E. Luna, R. Hey, and A. Trampert

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

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(Published online 27 December 2011)

Abstract

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(In,Ga)As/GaAs quantum wells (QWs) are successfully fabricated via a thermally induced structural transition from deposited amorphous material to epitaxial films, also known as solid-phase epitaxy (SPE). Although exact processes occurring during the epilayer formation are unknown, it is shown that the method allows the fabrication of high quality QWs with abrupt and symmetric composition profiles. As discussed here, the analysis of the chemical interface (composition profile) of the SPE-grown QWs, and its comparison with the element profiles of similar heterostructures grown by conventional molecular beam epitaxy (C-MBE) provides further insight into the SPE processes. In particular, we find that regardless of the fabrication method (SPE vs C-MBE), the smooth variation of the element concentration with the position across the interface is remarkably well described by a sigmoidal function. Such functional dependence is determined by fundamental processes occurring during the growth; thus suggesting that the basic mechanisms of interface formation are similar in SPE and C-MBE. Finally, the effect of self- and post-growth thermal annealing on SPE QWs is also discussed.

ACKNOWLEDGMENTS

We would like to acknowledge M. Höricke for the fabrication of the samples, D. Steffen for her help with TEM specimen preparation, and R. Gargallo-Caballero for a careful reading of the manuscript.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
1. Solid-phase epitaxy of InAs on GaAs(001)
2. Interface analysis
3. Effect of self- and post-growth annealing
SUMMARY AND CONCLUSIONS

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KEYWORDS and PACS

Keywords

amorphous semiconductors, annealing, gallium arsenide, III-V semiconductors, indium compounds, interface structure, semiconductor epitaxial layers, semiconductor quantum wells, solid phase epitaxial growth

PACS

81.15.Np

Solid phase epitaxy; growth from solid phases
68.55.ag

Semiconductors
68.65.Fg

Quantum wells
73.61.Ey

III-V semiconductors
78.66.Fd

III-V semiconductors

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History

Received 16 September 2011
Accepted 3 December 2011
Published online 27 December 2011

Digital Object Identifier

http://dx.doi.org/10.1116/1.3672022

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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