Molecular beam epitaxy control and photoluminescence properties of InAsBi

Svensson, S. P.; Hier, H.; Sarney, W. L.; Donetsky, D.; Wang, D.; Belenky, G.

doi:doi:10.1116/1.3672023

Volume/Page
Keyword
DOI
Citation
Advanced

Volume: Page/Article:

Search Content Type

article doi:

Citation:

You are not logged in to this journal. Log In

Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / 28th North American Molecular Beam Epitaxy Conference

Previous Article | Next Article

J. Vac. Sci. Technol. B 30, 02B109 (2012); http://dx.doi.org/10.1116/1.3672023 (5 pages)

Molecular beam epitaxy control and photoluminescence properties of InAsBi

S. P. Svensson¹, H. Hier¹, W. L. Sarney¹, D. Donetsky², D. Wang², and G. Belenky²

¹US Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, Maryland 20783
²Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, New York 11794

View Map

(Published online 27 December 2011)

Abstract

References (12)

Article Objects (6)

Alerts
- Alert Me When Cited
- Alert Me When Corrected
Tools
Share
- Email Abstract
- Connotea
- CiteULike
- del.icio.us
- BibSonomy
- Tweet this Article
- Add to Facebook

Full Text: Read Online (HTML) | Download PDF | Rent Article | Buy PDF (US$28) | View Cart

Thick InAsBi layers were grown for photoluminescence (PL) characterization. The As to In overpressure ratio was carefully characterized and adjusted to achieve Bi-droplet-free surfaces. A closed loop feedback system was used to maintain the As overpressure during a 5-h deposition sequence. Despite a high degree of control of the growth parameters, evidence for local phase separation was observed in the PL spectra.

Article Outline

INTRODUCTION
EXPERIMENT
1. Controlling substrate temperature
2. Control of group V fluxes during growth of InAsBi
RESULTS
1. Surface morphology and crystalline quality
2. Optical quality
CONCLUSIONS

View more related articles.

KEYWORDS and PACS

Keywords

III-V semiconductors, indium compounds, molecular beam epitaxial growth, phase separation, photoluminescence, semiconductor growth, semiconductor thin films

PACS

81.15.Hi

Molecular, atomic, ion, and chemical beam epitaxy
68.55.ag

Semiconductors
78.55.Cr

III-V semiconductors
78.66.Fd

III-V semiconductors

RELATED DATABASES

To view database links for this article, you need to log in.

History

Received 16 September 2011
Accepted 3 December 2011
Published online 27 December 2011

Digital Object Identifier

http://dx.doi.org/10.1116/1.3672023

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

For access to fully linked references, you need to log in.

Figures (6)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)