Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)

Dargis, Rytis; Arkun, Erdem; Clark, Andrew; Roucka, Radek; Smith, Robin; Williams, David; Lebby, Michael; Demkov, Alexander A.

doi:doi:10.1116/1.3673799

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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / 28th North American Molecular Beam Epitaxy Conference

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J. Vac. Sci. Technol. B 30, 02B110 (2012); http://dx.doi.org/10.1116/1.3673799 (6 pages)

Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)

Rytis Dargis¹, Erdem Arkun¹, Andrew Clark¹, Radek Roucka¹, Robin Smith¹, David Williams¹, Michael Lebby¹, and Alexander A. Demkov²

¹Translucent, Inc., 952 Commercial St., Palo Alto, California 94303
²Department of Physics, the University of Texas at Austin, 1 University Station, C1600, Austin, Texas 78712

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(Published online 28 December 2011)

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Ternary and binary rare-earth oxides that are used as a template buffer, which accommodates the crystal lattice mismatch between substrate and a semiconductor layer, are discussed here. The oxides were grown on Si(111) substrates and exhibit the cubic bixbyite crystal structure. Stabilization of the cubic bixbyite structure of ternary erbium-neodymium oxide and lanthanum oxide was analyzed using structural investigation of the epitaxially grown oxides and ab initio density functional theory calculations. The authors demonstrate that despite the more energetically favorable hexagonal structure of bulk lanthanum oxide a pseudomorphic single crystal cubic lanthanum oxide layer grows under nonequilibrium conditions of a molecular beam epitaxy process on gadolinium oxide. Growth of hexagonal lanthanum oxide begins when the critical thickness of the layer is reached. Germanium was epitaxially grown on the cubic bixbyite lanthanum sesquioxide. Due to a higher surface energy, germanium starts to grow in the form of twinned islands on the oxide layer that later merge, forming a closed layer. X ray diffraction reveals mostly single crystal structure of the germanium layer with stacking twins located only at the interface with the lanthanum oxide layer.

ACKNOWLEDGMENT

The authors would like to express their gratitude to John Tolle of Silicon Photonics Group for performing of the TEM measurements.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
SUMMARY

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KEYWORDS and PACS

Keywords

ab initio calculations, crystal structure, density functional theory, elemental semiconductors, erbium compounds, gadolinium compounds, germanium, Ge-Si alloys, lanthanum compounds, molecular beam epitaxial growth, neodymium compounds, semiconductor epitaxial layers, semiconductor growth, surface energy, twinning

PACS

68.55.ag

Semiconductors
61.72.Mm

Grain and twin boundaries
65.40.gp

Surface energy
81.15.Hi

Molecular, atomic, ion, and chemical beam epitaxy

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History

Received 17 September 2011
Accepted 10 December 2011
Published online 28 December 2011

Digital Object Identifier

http://dx.doi.org/10.1116/1.3673799

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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