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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / 28th North American Molecular Beam Epitaxy Conference

J. Vac. Sci. Technol. B 30, 02B111 (2012); http://dx.doi.org/10.1116/1.3673798 (4 pages)

Photoluminescence study of self-assembled GaAs quantum wires on (631)A-oriented GaAs substrates

E. Cruz-Hernández1, D. Vázquez-Cortés1, A. Cisneros-de-la-Rosa1, E. López-Luna1, V. H. Méndez-García1, and S. Shimomura2

1Coordinación para la Innovación y Aplicación de la Ciencia y la Tecnología, UASLP, San Luis Potosí, México
2Graduate School of Science and Engineering, Ehime University, Ehime, Japan

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(Published online 9 January 2012)

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The authors report a low-temperature photoluminescence (PL) study of multiple GaAs layers grown between AlAs(0.6 nm)/GaAs(0.6 nm) short-period superlattice barriers (SLBs) simultaneously grown on both GaAs(631)A and (100) substrates. Five GaAs-layers of different nominal thicknesses (LW, ranging from 12 to 2.4 nm) were grown by molecular beam epitaxy. By using (631)A-oriented substrates a self-organized and highly ordered corrugation is obtained in the growth of the GaAs layers, and at the end of the SLB growth, flat surfaces are found. Whereas, for the (100)-oriented sample, flat interfaces are confirmed after the growth of GaAs and SLB layers. By reducing LW below ∼3.6 nm in the (631) sample, strong quantum wire (QWR)-like confinement is achieved as deduced from polarized PL spectroscopy where polarization degrees as large as 0.43 are obtained. The PL emission energy of the (631)-QWRs is redshifted, as compared with the transitions of the (100)-oriented quantum wells, when LW is reduced. The authors explain this energy shift by the widening of the effective thickness of the confinement regions in the GaAs layers.

© 2012 American Vacuum Society

ACKNOWLEDGMENT

This work was partially supported by CONACYT-México.

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION
  4. CONCLUSIONS

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KEYWORDS and PACS

Keywords

gallium arsenide, III-V semiconductors, molecular beam epitaxial growth, photoluminescence, self-assembly, semiconductor quantum wires, semiconductor superlattices

PACS

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History
Received 17 September 2011
Accepted 10 December 2011
Published online 9 January 2012
Digital Object Identifier
http://dx.doi.org/10.1116/1.3673798

PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

Publisher

American Vacuum Society

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