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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / 28th North American Molecular Beam Epitaxy Conference

J. Vac. Sci. Technol. B 30, 02B112 (2012); http://dx.doi.org/10.1116/1.3675455 (5 pages)

Analysis of defect-free GaSb/GaAs(001) quantum dots grown on the Sb-terminated (2 × 8) surface

Andrew J. Martin1, Timothy W. Saucer2, Kai Sun3, Sung Joo Kim3, Guang Ran3, Garrett V. Rodriguez2, Xiaoqing Pan1, Vanessa Sih2, and Joanna Millunchick1

1Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109
2Department of Physics, University of Michigan, Ann Arbor, Michigan 48109
3Department of Materials Science and Engineering, University of Michigan, Ann Arbor, 48109

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(Published online 9 January 2012)

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Multilayer and single layer GaSb/GaAs(001) quantum dot structures were grown on an Sb-terminated (2 × 8) surface reconstruction and compared to those grown on an As-terminated (2 × 4) surface reconstruction. Uncapped quantum dots grown on the (2 × 8) surface were approximately 25% smaller in diameter and had a larger width/height aspect ratio. Quantum dots grown on both surfaces were defect free at the quantum dot/spacer layer interface. The dots did not appear to be fully compact when imaged by transmission electron microscopy, which may be due to dissolution and/or quantum ring formation. The quantum dot photoluminescence peak for dots grown on the (2 × 8) surface was brighter but at the same energy as that of dots grown on the (2 × 4) surface. This was likely the result of a higher areal density of dots on the (2 × 8) surface and a lower tendency for them to intermix during capping, resulting in dots of similar size for both samples after capping. Quantum dots grown on the (2 × 8) surface also displayed greater morphological stability when quenched in the absence of Sb.

© 2012 American Vacuum Society

ACKNOWLEDGMENTS

This material is based upon work supported as part of the Center for Solar and Thermal Energy Conversion, an Energy Frontier Research Center funded by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Grant No. DE-SC0000957. Transmission electron microscopy work in this paper is supported byNSF Grant No. DMR-0723032. We would also like to acknowledge Thomas O’Haver at the University of Maryland for his peak fitting program.

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL PROCEDURE
  3. RESULTS AND DISCUSSION
  4. CONCLUSIONS

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KEYWORDS and PACS

Keywords

dissolving, gallium arsenide, III-V semiconductors, multilayers, photoluminescence, quenching (thermal), semiconductor quantum dots, surface reconstruction, transmission electron microscopy

PACS

  • 68.65.Hb

    Quantum dots (patterned in quantum wells)

  • 68.47.Fg

    Semiconductor surfaces

  • 78.67.Hc

    Quantum dots

  • 78.67.Pt

    Multilayers; superlattices; photonic structures; metamaterials

  • 81.40.Gh

    Other heat and thermomechanical treatments

  • 68.35.bg

    Semiconductors

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History
Received 19 September 2011
Accepted 14 December 2011
Published online 9 January 2012
Digital Object Identifier
http://dx.doi.org/10.1116/1.3675455

PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

Publisher

American Vacuum Society

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