Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy

Storm, D. F.; Meyer, D. J.; Katzer, D. S.; Binari, S. C.; Paskova, Tanya; Preble, E. A.; Evans, K. R.; Zhou, Lin; Smith, David J.

doi:doi:10.1116/1.3676175

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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / 28th North American Molecular Beam Epitaxy Conference

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J. Vac. Sci. Technol. B 30, 02B113 (2012); http://dx.doi.org/10.1116/1.3676175 (7 pages)

Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy

D. F. Storm¹, D. J. Meyer¹, D. S. Katzer¹, S. C. Binari¹, Tanya Paskova², E. A. Preble², K. R. Evans², Lin Zhou³, and David J. Smith³

¹Naval Research Laboratory, Electronics Science & Technology Division, Code 6852, 4555 Overlook Ave. SW, Washington, DC 20375
²Kyma Technologies, Inc., 8829 Midway West Road, Raleigh, North Carolina 27617
³Department of Physics, Arizona State University, Tempe, Arizona 85287

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(Published online 12 January 2012)

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The authors have investigated the growth and structural and electrical properties of homoepitaxial GaN layers and GaN/AlGaN heterostructures grown on free-standing, hydride vapor phase epitaxy grown, N-polar GaN:Fe substrates by rf-plasma molecular beam epitaxy. Secondary-ion mass spectroscopic analysis of unintentionally doped and Be-doped N-polar GaN layers indicate that oxygen is the dominant impurity in all layers and is largely insensitive to growth temperature in the range investigated (675 °C < T_S < 760 °C). Transmission electron microscopy (TEM) indicates that threading dislocations are generated at the regrowth interface in these samples; in contrast to homoepitaxial growth on Ga-polar GaN, and that the density of threading dislocations diminishes as the growth temperature increases. However, examination by TEM indicates that threading dislocations are not generated at the regrowth interface of samples subjected to pregrowth substrate surface cleaning by gallium deposition and desorption and subsequent growth of ultrathin (15 Å) initial AlN layers. N-polar GaN/AlGaN heterostructures grown on Be-doped homoepitaxial N-polar GaN buffers exhibit low buffer leakage and Hall mobilities up to 1680 cm²/Vs at sheet densities of 1.3 × 10¹³cm⁻². High electron mobility transistors have been fabricated on these structures; drain current densities over 700 mA/mm and breakdown voltages as high as 70 V have been measured.

ACKNOWLEDGMENTS

This work was supported by the Office of Naval Research. The authors gratefully acknowledge the assistance of Neil Green for device processing and fabrication. The electron microscopy studies at Arizona State University were carried out under contract to Wyle Laboratories as part of Reliability Information Analysis Center (RIAC) Contract No. HC1047-05-D-4005 (Monitor: Stephen Tetlak), under the Air Force Research Laboratory Sensor Directorate Technical Area Task 117 (Monitor: Chris Bozada).

Article Outline

INTRODUCTION
EXPERIMENT
1. N-polar GaN substrates
2. Epitaxial growth and characterization
  1. Homoepitaxial GaN
  2. GaN/Al _x Ga _1−x N heterostructures
RESULTS AND DISCUSSION
SUMMARY AND CONCLUSIONS

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KEYWORDS and PACS

Keywords

desorption, dislocations, Hall mobility, high electron mobility transistors, molecular beam epitaxial growth, secondary ion mass spectroscopy, transmission electron microscopy

PACS

85.30.Tv

Field effect devices
85.75.Hh

Spin polarized field effect transistors
68.55.A-

Nucleation and growth

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History

Received 16 September 2011
Accepted 20 December 2011
Published online 12 January 2012

Digital Object Identifier

http://dx.doi.org/10.1116/1.3676175

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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