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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / 28th North American Molecular Beam Epitaxy Conference

J. Vac. Sci. Technol. B 30, 02B114 (2012); http://dx.doi.org/10.1116/1.3672025 (7 pages)

Growth of GaSb1−xBix by molecular beam epitaxy

Yuxin Song (宋禹忻)1, Shumin Wang1, Ivy Saha Roy1, Peixiong Shi2, and Anders Hallen3

1Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
2DANCHIP, Technical University of Denmark, DK-2800, Lyngby, Denmark
3ICT, Royal Institute of Technology, SE-16440 Kista, Sweden

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(Published online 18 January 2012)

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Molecular beam epitaxy for GaSb1−xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1−xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and GaAs substrates were compared and no apparent difference for Bi incorporation was found.

© 2012 American Vacuum Society

ACKNOWLEDGMENT

The Swedish Research Council (VR) is acknowledged for financial support for this project.

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSIONS
    1. Bismuth incorporation in GaSb 1−x Bi x
    2. Temperature dependence of GaSb 1−x Bi x growth
    3. GaSb 1−x Bi x grown on GaAs
  4. SUMMARIES

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KEYWORDS and PACS

Keywords

bismuth alloys, gallium alloys, molecular beam epitaxial growth, Rutherford backscattering, secondary ion mass spectra, silicon alloys, X-ray diffraction

PACS

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 61.05.Np

    Atom, molecule, and ion scattering (for structure determination only)

  • 68.55.J-

    Morphology of films

  • 79.20.Rf

    Atomic, molecular, and ion beam impact and interactions with surfaces

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History
Received 20 September 2011
Accepted 4 December 2011
Published online 18 January 2012
Digital Object Identifier
http://dx.doi.org/10.1116/1.3672025

PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

Publisher

American Vacuum Society

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