Electrical properties of C60 and Si codoped GaAs layers

Nishinaga, Jiro; Horikoshi, Yoshiji

doi:doi:10.1116/1.3678205

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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / 28th North American Molecular Beam Epitaxy Conference

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J. Vac. Sci. Technol. B 30, 02B116 (2012); http://dx.doi.org/10.1116/1.3678205 (4 pages)

Electrical properties of C₆₀ and Si codoped GaAs layers

Jiro Nishinaga¹ and Yoshiji Horikoshi²

¹Institute for Advanced Study, Waseda University, 1-6-1 Nishiwaseda, Shinjuku, Tokyo 169-8050, Japan, and PRESTO, JST, 4-1-8 Honcho Kawaguchi, Saitama, 332-0012, Japan
²School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan

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(Published online 24 January 2012)

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C₆₀ uniformly doped GaAs and C₆₀, Si codoped GaAs layers are grown by a migration enhanced epitaxy method. C₆₀ doped GaAs layers show a single and sharp diffraction peak in x-ray diffraction and only an LO phonon peak is confirmed, indicating that the crystalline quality is fairly good. All of the C₆₀ doped GaAs layers have highly resistive characteristics, and C₆₀, Si codoped GaAs layers show n-type conductivity only when the Si concentration is of the same order or greater than the total carbon concentrations. At low temperatures the conductivity of the C₆₀, Si codoped GaAs layers increases with exposure to light whose energy is below the GaAs bandgap energy. The electron concentrations and mobilities of the layers are confirmed to be increased under illumination by wavelengths between 900 and 1100 nm. These results imply that the electron transitions from the valence band to the trap levels and from the trap levels to the conduction band occur simultaneously as if the traps act as intralevels. As a result, the carrier concentrations are enhanced in the same way they would be if the excitation was above the GaAs bandgap energy.

ACKNOWLEDGMENTS

This work is partly supported by Grants-in-Aid for Young Scientists (B) (22760233) from the Japan Society for the Promotion of Science (JSPS), and by the Global COE Program “Practical Chemical Wisdom” from the Ministry of Education, Culture, Sports, Science and Technology (MEXT).

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
SUMMARY AND CONCLUSIONS

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KEYWORDS and PACS

Keywords

conduction bands, electrical conductivity transitions, electrical resistivity, electron density, electron mobility, elemental semiconductors, energy gap, fullerenes, gallium arsenide, III-V semiconductors, infrared spectra, molecular beam epitaxial growth, phonons, semiconductor epitaxial layers, semiconductor growth, silicon, valence bands, X-ray diffraction

PACS

73.61.Ey

III-V semiconductors
78.30.Fs

III-V and II-VI semiconductors
78.66.Fd

III-V semiconductors
81.15.Hi

Molecular, atomic, ion, and chemical beam epitaxy
68.55.ag

Semiconductors
72.60.+g

Mixed conductivity and conductivity transitions

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History

Received 17 September 2011
Accepted 28 December 2011
Published online 24 January 2012

Digital Object Identifier

http://dx.doi.org/10.1116/1.3678205

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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