Molecular beam epitaxial growth and characterization of nitrogen δ-doped AlGaAs/GaAs quantum wells

Furuse, Shin-ichiro; Sumiya, Kengo; Morifuji, Masato; Ishikawa, Fumitaro

doi:doi:10.1116/1.3678204

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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / 28th North American Molecular Beam Epitaxy Conference

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J. Vac. Sci. Technol. B 30, 02B117 (2012); http://dx.doi.org/10.1116/1.3678204 (5 pages)

Molecular beam epitaxial growth and characterization of nitrogen δ-doped AlGaAs/GaAs quantum wells

Shin-ichiro Furuse, Kengo Sumiya, Masato Morifuji, and Fumitaro Ishikawa

Department of Quantum Electronic Device Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

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(Published online 1 February 2012)

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The authors carry out δ-doping at the middle of AlGaAs/GaAs quantum wells employing molecular beam epitaxy and varying the nitrogen coverage up to 0.5 monolayers. Transmission electron micrography and x ray diffraction indicate the introduction of a nitrogen δ-doped layer with precisely controlled position and nitrogen coverage. Photoluminescence spectra obtained for the samples show clear redshift of spectral peak positions depending on the amount of nitrogen, suggesting the band structure is modified by the δ-doping. The growth can be carried out at a substrate temperature of 560 °C. The growth temperature, which is high compared with that of standard dilute nitride compounds, could suppress the formation of growth-induced defects, resulting in the weak effect of post-growth thermal annealing on the characteristics of room-temperature photoluminescence.

ACKNOWLEDGMENTS

This work was partly supported by a Grant-in-Aid for Young Scientists (A) from the Japan Society for the Promotion of Science (JSPS), the Research Foundation for Opto-Science and Technology, and a grant from the Osaka University Global COE Program “Center for Electronic Devices Innovation.”

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSIONS
1. Effect of growth interruption
2. Structural characteristics
3. Optical characteristics
  1. Effect of quantum confinement
  2. Effect of annealing
CONCLUSION

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KEYWORDS and PACS

Keywords

aluminium compounds, annealing, band structure, gallium arsenide, III-V semiconductors, molecular beam epitaxial growth, monolayers, photoluminescence, red shift, semiconductor doping, semiconductor growth, semiconductor quantum wells, transmission electron microscopy, X-ray diffraction

PACS

81.15.Hi

Molecular, atomic, ion, and chemical beam epitaxy
61.72.uj

III-V and II-VI semiconductors
61.72.Cc

Kinetics of defect formation and annealing
78.55.Cr

III-V semiconductors
78.66.Fd

III-V semiconductors
78.67.De

Quantum wells

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History

Received 16 September 2011
Accepted 26 December 2011
Published online 1 February 2012

Digital Object Identifier

http://dx.doi.org/10.1116/1.3678204

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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