InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics

Lin, C. A.; Huang, M. L.; Chiu, P.-C.; Lin, H.-K.; Chyi, J.-I.; Chiang, T. H.; Lee, W. C.; Chang, Y. C.; Chang, Y. H.; Brown, G. J.; Kwo, J.; Hong, M.

doi:doi:10.1116/1.3678206

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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / 28th North American Molecular Beam Epitaxy Conference

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J. Vac. Sci. Technol. B 30, 02B118 (2012); http://dx.doi.org/10.1116/1.3678206 (4 pages)

InAs MOS devices passivated with molecular beam epitaxy-grown Gd₂O₃ dielectrics

C. A. Lin¹, M. L. Huang¹, P.-C. Chiu², H.-K. Lin², J.-I. Chyi², T. H. Chiang³, W. C. Lee³, Y. C. Chang³, Y. H. Chang³, G. J. Brown⁴, J. Kwo⁵, and M. Hong⁶

¹Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
²Department of Electrical Engineering, National Central University, Jhongli 32001, Taiwan
³Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
⁴Air Force Research Laboratory (AFRL), Dayton, Ohio 45433
⁵Center for Condensed Matter Sciences, National Taiwan University, Taipei, 10617 Taiwan
⁶Department of Physics and Graduate Institute of Applied Physics, National Taiwan University, Taipei, 10617 Taiwan

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(Published online 1 February 2012)

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InAs MOS devices passivated with molecular beam epitaxy (MBE)-grown Gd₂O₃ 2–3 monolayers thick followed by an Al₂O₃ cap have demonstrated excellent electrical performances and interfacial properties. Band offset energies of in situ atomic-layer-deposited (ALD)-Al₂O₃/MBE-Gd₂O₃/InAs and ALD-Al₂O₃/InAs were determined by in situ x-ray photoelectron spectroscopy in conjunction with Fowler–Nordheim tunneling current analysis. A conduction-band offset energy (ΔE_c) and a valence-band offset energy of 2.3 and 3.92 eV for ALD-Al₂O₃/InAs were determined, respectively. The insertion of a Gd₂O₃ layer increases the value of ΔE_c by nearly 0.1 eV as compared to the case for Al₂O₃ directly deposited on InAs. The distribution of interfacial density of states (D_it) within the InAs bandgap, deduced by the conductance method at 77 K, gives a low D_it value of 10¹² cm⁻² eV⁻¹ near the conduction-band edge. Moreover, with energy band engineering in the heterostructure, gate-first depletion channel InAs MOSFETs have produced drain current density of 46 μA/μm and transconductance of 17 μS/μm for 12-μm-gate-length devices at 300 K.

ACKNOWLEDGMENTS

The authors thank the National Science Council, Taiwan for supporting this work under Grant Nos. NSC-98-2120-M-007-002 and NSC-97-3114-M-007-001. The support from the Asian Office of Aerospace Research and Development of the U.S. Air Force is acknowledged.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
CONCLUSION

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KEYWORDS and PACS

Keywords

aluminium compounds, atomic layer deposition, conduction bands, energy gap, gadolinium compounds, III-V semiconductors, indium compounds, interface states, molecular beam epitaxial growth, monolayers, MOSFET, passivation, tunnelling, valence bands, X-ray photoelectron spectra

PACS

85.30.Tv

Field effect devices

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History

Received 17 September 2011
Accepted 1 January 2012
Published online 1 February 2012

Digital Object Identifier

http://dx.doi.org/10.1116/1.3678206

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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